Rchr
J-GLOBAL ID：200901024077097141
Update date: Oct. 28, 2024
Takakura Kenichiro
タカクラ ケンイチロウ | Takakura Kenichiro
Affiliation and department：
Research field (1)：
Electronic devices and equipment
Research keywords (1)：
半導体デバイス放射線損傷
Research theme for competitive and other funds (10)：
- 2023 - 2026 データ駆動科学によるシリサイド大型結晶開発と高効率熱光発電セルへの応用
- 2019 - 2022 原子力発電所等高放射線環境下で動作可能な電子回路の開発
- 2017 - 阿蘇の天然資源を用いた低コスト排ガス処理用触媒の開発
- 2013 - 2016 Fabrication of thin film flexible transistor using gallium oxide
- 2005 - 2007 Radiation damage mechanism of advanced semiconductor materials and devices
- 2005 - 2007 Irradiation temperature dependence of advanced semiconductor devices
- 2005 - 2007 酸化ガリウムへのドーピングによる透明電極膜の導電率向上
- 2002 - 2004 Study on radiation damages of semiconductor devices for high and low temperature
- 2002 - 半導体デバイスの放射線損傷に関する研究
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Papers (42)：
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Kenichiro Takakura, Kensuke Matsumoto, Kousei Tateishi, Masashi Yoneoka, Isao Tsunoda, Shigekazu Suzuki, Shinji Kawatsuma. Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation. J. Robotics Mechatronics. 2024. 36. 1. 88-94
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Atsuki Morimoto, Towa Hirai, Ayato Takazaiku, Yo Eto, Hajime Kuwazuru, Kenichiro Takakura, Isao Tsunoda. Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing. Japanese Journal of Applied Physics. 2024. 63. 2. 02SP50-02SP50
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Kouki Fukushima, Naoki Mizunuma, Tatsuya Uematsu, Kyoko Shimizu, Takehiro Ota, Isao Tsunoda, Masashi Yoneoka, Haruhiko Udono, Kenichiro Takakura. Study of deep levels in the Mg2Si grown by vertical Bridgeman method. Japanese Journal of Applied Physics. 2022. 62. SD. SD1012-SD1012
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Kazuaki Sumi, Noboru Shimizu, Kenichiro Takakura, Isao Tsunoda. Low temperature formation of high-quality crystalline Ge (1 1 1) by improving Au catalyst crystallinity. Journal of Crystal Growth. 2021. 572. 126270-126270
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Maria Glória Caño de Andrade, Luis Felipe de Oliveira Bergamim, Braz Baptista Júnior, Carlos Roberto Nogueira, Fábio Alex da Silva, Kenichiro Takakura, Bertrand Parvais, Eddy Simoen. Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors. Solid-State Electronics. 2021. 183. 108050-108050
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MISC (334)：
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K. Shimizu, T. Ota, T. Uematsu, H. Udono, I. Tsunoda, K. Takakura. Investigation of the carrier capture levels in the n-Mg2Si single crystals with varying carrier density. 2024
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T. Nakahara, H. Nonaka, A. Takazaiku, K. Takakura, I. Tsunoda. High-pressure annealing effect of Mg induced lateral growth of a-Ge. 2024
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T. Nagashima, A. Morimoto, S. Kikumoto, K. Takakura, I. Tsunoda. Solid phase growth of a-Ge/Mg/SiO2 stacked structure. 2024
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Improvement of Crystallinity of Mg induced growth Ge by High-pressure annealing. 2024
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Mg-induced lateral crystallization of amorphous Ge thin film on insulating substrate (3). 2024
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Patents (4)：
Education (2)：
- - 2002 University of Tsukuba
- - 2002 University of Tsukuba Graduate School, Division of Engineering Materials Science and Engneering
Professional career (1)：
Work history (6)：
Association Membership(s) (1)：
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