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J-GLOBAL ID：200901026410851447 Update date: Apr. 02, 2025

SUZUKI TOSHI-KAZU

スズキトシカズ | SUZUKI TOSHI-KAZU

Affiliation and department：
Job title： Professor

Research field (2)： Electric/electronic material engineering , Electronic devices and equipment

Research keywords (2)：半導体デバイス , 化合物半導体

Research theme for competitive and other funds (4)：

2022 - 2025 界面電荷・歪分極エンジニアリングの併用による窒化物半導体デバイス閾値電圧制御
2015 - 2018 Mid-infrared exciton control based on low-dimensional image charge effects in narrow-gap semiconductors
2014 - 2017 Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturization
2006 - 2007 Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuits

Papers (27)：

Yuchen Deng, Jieensi Gelan, Kazuya Uryu, Toshi-kazu Suzuki. AlGaN/GaN devices with metal-semiconductor or insulator-semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge. Journal of Applied Physics. 2024. 135. 8
Duong Dai Nguyen, Yuchen Deng, Toshi-kazu Suzuki. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023. 38. 9
Kazuya Uryu, Yuchen Deng, Son Phuong Le, Toshi-kazu Suzuki. Electron mobility enhancement in n-GaN under Ohmic-metal. AIP ADVANCES. 2023. 13. 7
Kazuya Uryu, Shota Kiuchi, Taku Sato, Toshi-kazu Suzuki. Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals. Applied Physics Letters. 2022. 120. 5
Kazuya Uryu, Shota Kiuchi, Toshi-kazu Suzuki. Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices. Applied Physics Letters. 2021. 119. 2

Books (1)：

Lectures and oral presentations (3)：

Characterization and analysis of GaN-based MIS-HFETs --A method using capacitance-frequency-temperature mapping (Invited)
(The 40th International Symposium on Compound Semiconductors (ISCS2013) 2013)
異種材料融合集積に向けた狭ギャップ化合物半導体技術
(電気学会調査専門委員会 2008)
Narrow-gap III-V semiconductor technology: lattice-mismatched growth and epitaxial lift-off for heterogeneous integration (Invited)
(2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2008)

Professional career (3)：

Work history (1)：

Committee career (3)：

Awards (4)：

2022/04 - IOP (Institute of Physics) Publishing Outstanding Reviewer Award 2021
2018/04 - The Japan Society of Applied Physics APEX/JJAP Editorial Contribution Award
2018/03 - 電子情報通信学会エレクトロニクスソサイエティ活動功労表彰
2015/04 - The Japan Society of Applied Physics APEX/JJAP Editorial Contribution Award

Association Membership(s) (3)：

電気学会 , 電子情報通信学会 , 応用物理学会

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