Kubo Toshiharu

クボトシハル | Kubo Toshiharu

Affiliation and department：
Job title： Associate Professor
Homepage URL (1)： http://www.geocities.jp/egawa_lab/

Research field (3)： Electronic devices and equipment , Electric/electronic material engineering , Applied materials

Research keywords (1)： electronic device

Research theme for competitive and other funds (10)：

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Papers (23)：

Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa. Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films. Applied Physics Express. 2021. 14. 116503
PradipDalapati, KosukeYamamoto, ToshiharuKubo, TakashiEgawa, MakotoMiyoshi. Bias-controlled photocurrent generation process in GaN-based ultraviolet p-i-n photodetectors fabricated with a thick Al2O3 passivation layer. Optik. 2021. 245. 167691
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi. High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator. Journal of Vacuum Science & Technology B. 2019. 37. 041205-1-041205-4
Toshiharu Kubo, Takashi Egawa. Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition. Physica B. 2019. 571. 210-212
Debaleen Biswas, Naoki Torii, Hirotaka Fujita, Takahiro Yoshida, Toshiharu Kubo, Takashi Egawa. Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures. Semiconductor Science and Technology. 2019. 34. 055014-1-055014-6

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Patents (2)：

Lectures and oral presentations (87)：

ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたノーマリーオフ型AlGaN/GaN MIS-HEMTの電気特性評価
(電子情報通信学会11月研究会 2021)
ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたノーマリーオフ型AlGaN/GaN MIS-HEMTの電気特性
(第82回応用物理学会秋季学術講演会 2021)
Pt/ALD-Al2O3/AlGaN/GaN MIS-HEMTの電気特性に及ぼすフォーミングガスアニールの効果III
(第68回応用物理学会春季学術講演会 2021)
転写フリーグラフェンの結晶性に及ぼすNi金属触媒の結晶性の効果II
(第68回応用物理学会春季学術講演会 2021)
Estimation of Electrical Properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 Double Insulators Fabricated by ALD
(ISPlasma2021 2021)

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Education (2)：

1999 - 2005 Keio University Graduate School, Division of Science and Engineering School of Fundamental Science and Technology
1995 - 1999 Keio University Faculty of Science and Engineering Department of applied physics and physico-informatics

Professional career (2)：

Work history (4)：

2018/04/01 - 現在 Nagoya Institute of Technology Graduate School of Engineering Shikumi College Associate Professor
2010/04/01 - 2018/03/31 Nagoya Institute of Technology Assistant Professor
2008/12/15 - 2010/03/31 Hokkaido University Research Center for Integrated Quantum Electronics Part-time researcher for university or other academic organization
2005/10/15 - 2008/12/14 The University of Tokyo School of Engineering Part-time researcher for university or other academic organization

Committee career (5)：

Awards (1)：

2017/03/05 - ISPlasma2017/IC-PLANTS2017 Committee ISPlasma2017/IC-PLANTS2017 Best Presentation Award

Association Membership(s) (2)：

電子情報通信学会電子デバイス研究会 , 日本応用物理学会

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