Rchr

J-GLOBAL ID：200901043991039324 Update date: Nov. 05, 2024

Motohisa Junichi

モトヒサジュンイチ | Motohisa Junichi

Affiliation and department：
Homepage URL (1)： http://hydrogen.rciqe.hokudai.ac.jp/~motohisa/pukiwiki

Research field (5)： Optical engineering and photonics , Electronic devices and equipment , Electric/electronic material engineering , Crystal engineering , Applied materials

Research keywords (34)：選択成長 , 有機金属気相成長 , 量子ドット , 結晶成長 , 半導体 , フォトニック結晶 , 表面超格子 , フォトルミネセンス , ヘテロ構造 , 論理回路 , 半導体ナノワイヤ , 有機金属気相成長法 , 再成長 , マスクパターン , 線欠陥・点欠陥導入構造 , スーパーアトム , 人工結晶 , 多段原子ステップ , 光取り出し効率 , 原子ステップ , 顕微フォトルミネセンス , ナノ構造周期配列構造 , 人工原子 , フォトニックバンドギャップ , 単一光子光源 , 加工基板 , 3角格子 , 時間領域差分(FDTD)法 , 電界効果トランジスタ , フォトニック結晶スラブ , 半導体デバイス , 半導体物性 , 半導体ナノ構造 , 半導体結晶成長

Research theme for competitive and other funds (38)：

2022 - 2026 Development of nanowire hybrid integrated devices
2021 - 2025 Development of vertical HEMT-type devices using Si-Ge core-shell heterojunction nanowires
2020 - 2023 Generation of Vector Beams using Semiconductor Nanowires
2019 - 2022 Inverstigation on vertical tunnel FET using Si/III-V heterojunction and their three-dimensional integrated circuit applications
2019 - 2021 Study on the fabrication of Vertical FETs using GaN-Based Singular Nanostructures and Their Novel Characterization Method

2017 - 2020 Low-damage Processing of Nitride Semiconductors Based on Self-stoping Oxdization and Transistor Applications

2017 - 2020 Study on Light-Emittind Devices on Si Substrates based on Semiconductor Nanowires

2017 - 2020 Bottom-Up Integration of Vertical Nanowire Spin-Transistors on Silicon

2017 - 2019 Fabrication and Characterization of Vertical FETs using GaN-based Nanowires

2016 - 2018 A Novel Photodetector Utilizing Semiconductor Nanowires

2015 - 2018 Visible light responsive photocatalysts utilizing nitride semiconductor-based nanostructures for artificial photosynthesis

2013 - 2016 Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors

2012 - 2015 Fabrication of nanowire-based light emitting nanodevices

2012 - 2015 Development of passive wireless sensor powered by vibration generator for safety surveillance of social infractructure

2012 - 2014 Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructures

2011 - 2014 Study on Spin-Polarized Light-Emitting Diodes using Ferromagnetic/Semiconducting Nanowire Hybrids on Si Substrate

2009 - 2010 化合物半導体配列ナノ構造を基盤とする超接合光吸収体の創成と太陽電池応用

2006 - 2010 Semiconductor Nanowire Electronics by Selective-Area Metal-Organic Vapor Phase Epitaxy

2007 - 2009 Development of Quantum Integrated Hardwares based on Semiconductor Nanowires

2006 - 2007 有機金属気相選択成長法によるガリウムヒ素単電子メモリの作製と評価

2005 - 2006 半導体・強磁性体複合型ナノワイヤを用いた縦型ナノスピントランジスタの研究

2005 - 2006 半導体ナノワイヤを用いた単一光子光源の研究

2003 - 2005 Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices

2001 - 2005 有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクス

2002 - 2004 Surface/interface control of high-frequency and high-power transistors based on GaN materials

2002 - 2003 半導体人工格子による磁性制御

2000 - 2002 Formation of Photonic Crystals by Selective Area Growth and Their Applications

2001 - 2001 単一電子入力・単一電子出力型記憶素子の研究

1999 - 2001 "Insulated gate structures on GaN and their interface properties"

1999 - 2001 Metal contact formation to GaN based on the interface control technologies

1997 - 2000 Formation and Characterization of High Density Semiconductor Quantum Dots

1997 - 1998 "Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"

1996 - 1997 人工原子′′スーパーアトム′′の作製と評価

1995 - 1996 Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices

1994 - 1995 Fabrication of Ultrasmall Compound Semiconductor Nanostructures with Controlled Interfaces and Characterization of Their Electronic Properties

1994 - 1995 Fabrication and Characterization of Self-organized Quantum Nano-structures.

1992 - 1993 Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area Grant

半導体ナノ構造の形成、評価とデバイス、回路応用

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Papers (261)：

Yu Katsumi, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka. InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure. ACS Applied Materials & Interfaces. 2024
Masahiro Sasaki, Tomoya Akamatsu, Katsuhiro Tomioka, Junichi Motohisa. Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots. Nanotechnology. 2024. 35. 19. 195604-195604
Junichi Motohisa, Akamatsu Tomoya, Okamoto Manami, Tomioka Katsuhiro. Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures emitting in telecom band. Japanese Journal of Applied Physics. 2024. 63. 3. 03SP08-03SP08
Hironori Gamo, Chen Lian, Junichi Motohisa, Katsuhiro Tomioka. Selective-Area Growth of Vertical InGaAs/GaSb Core-Shell Nanowires on Silicon and Dual Switching Properties. ACS Nano. 2023
Katsuhiro Tomioka, Kazuharu Sugita, Junichi Motohisa. Enhanced Light Extraction of Nano-Light-Emitting Diodes with Metal-Clad Structure Using Vertical GaAs/GaAsP Core-Multishell Nanowires on Si Platform. Advanced Photonics Research. 2023. 4. 7

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MISC (130)：

小原康, 島内道人, 佐藤威友, 本久順一. 電気めっき法によるGaNへのPt電極の形成と電気特性評価. 応用物理学会北海道支部/日本光学会北海道支部合同学術講演会講演予稿集. 2020. 55th-16th
J. Motohisa, H. Kameda, M. Sasaki, S. Hara, K. Tomioka. Photoluminescence of Zn-Doped InP Nanowires: Mixing of Crystal Structures, Donor-Acceptor Pair Recombination, and Surface Effects. Collected Abstract of the 29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue, Japan, July 31-August 4, 2017, TuP-33. 2017. 1-2
S. Yanase, H. Sasakura, S. Hara, J. Motohisa. Density Control of InP-based Nanowires and Nanowire Quanutm Dots. Collected Abstract of the 35th Electronic Materials Symposium (EMS-35), Moriyama, Japan, July 6-8, 2016, Th3-2. 2016. 1-2
T. Wada, S. Hara, J. Motohisa. Growth and Characterization of Vertical Nanocavity Using Core-Multishell Nanowires. Collected Abstract of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo, Japan, September 27-30, 2015, D-4-3. 2015. 1-2
Stochastic Resonance Ring-delay-line ADC for a low amplitude signal detection. 2015. 115. 124. 33-36

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Patents (13)：

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Books (5)：

Fundamental properties of semiconductor nanowires
Springer Nature Singapore 2021 ISBN:9789811590498
Nanowires and Nanotubes - Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials: Volume 1439 (MRS Proceedings)
Materials Research Society 2012 ISBN:1605114162
Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications (NanoScience and Technology)
Springer 2012 ISBN:3642224792
Lateral Alignment of Epitaxial Quantum Dots (NanoScience and Technology)
Springer 2010 ISBN:3642079911
Physics and Applications of Semiconductor Quantum Structures
Taylor & Francis 2001 ISBN:0750306378

Lectures and oral presentations (147)：

横方向成長させたGaAsナノワイヤの評価
(応用物理学会秋季学術講演会講演 2013)
複数位相型TDC付きシングルスロープADCの動作タイミングによる低電力化
(電子情報通信学会技術研究報告 2013)
InGaAsナノワイヤの選択成長におけるV/III比の影響
(応用物理学会春季学術講演会講演 2013)
11bit5.1uW複数位相型TDC付きマルチスロープADC
(電子情報通信学会大会 2013)
RF-MBE法によるGaN及びInGaNの成長と評価
(応用物理学会北海道支部・日本光学会北海道地区合同学術講演会 2013)

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Professional career (1)：

博士(工学) (東京大学)

Work history (5)：

2020/04 - 現在 Hokkaido University Research Center for Integrated Quantum Electronics Director
2006/04 - 現在 Hokkaido University
2001/04 - 2006/03 Hokkaido University Research Center for Integrated Quantum Electronics
1994/04 - 2001/03 Hokkaido University
1993/04 - 1994/03 Hokkaido University

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