Rchr
J-GLOBAL ID：200901047676647508
Update date: Aug. 04, 2024
Hasegawa Shigehiko
ハセガワ シゲヒコ | Hasegawa Shigehiko
Affiliation and department：
Research field (4)：
Electronic devices and equipment
, Thin-film surfaces and interfaces
, Crystal engineering
, Applied materials
Research keywords (4)：
応用物性・結晶工学
, 表面界面物性
, Applied Physics of Property and Crystallography
, Surface Physics of Condensed Matter
Research theme for competitive and other funds (35)：
- 2019 - 2023 Dissipationless spin currents in metallic ambipolar conductors
- 2017 - 2020 Controlling spatial distribution of rare-earth elements in III-nitride semiconductors and their magnetic properties
- 2015 - 2018 Reciprocal accumulation of spins and charges in rare earth hydride bipolar conductors
- 2015 - 2018 Study of structure modification of boron nitride films by plasma exposure - the effect of ion energy distribution function
- 2012 - 2015 A design of spin polarization analyzer and its application to quasi-excusive OR gate
- 2010 - 2012 Spontaneous nanoscale phase separation and its application for the development of low-dimensional nanomaterials
- 2010 - 2012 Generation of Spin Current in Bipolar Conductors with Quasi-Zero Hall Coefficients
- 2009 - 2012 Study on spin dependent ballistic electron mapping and spin injectioninto semiconductors
- 2009 - 2011 Study on control of magnetic properties in ferromagnetic nitride semiconductor nanostructures
- 2009 - 2011 Study on the Physical Properties of Ferromagnetic Nitride Semiconductor Quantum Nanostructures and their Device Application
- 2007 - 2011 Development of Properties and Functionalities by Precise Control of Rare-Earth Doping
- 2009 - 2010 InGaNベース強磁性半導体による長波長円偏光半導体レ-ザ創製に関する研究
- 2007 - 2008 InNをベースとした長波長円偏光半導体レーザ創製に関する研究
- 2007 - 2008 難固溶不純物原子添加半導体のナノ量子構造に関する実験的研究
- 2006 - 2008 Study on Room Temperature Ferromagnetic Nitride Semiconductor Nanostructures and Nanospintronics Device Application
- 2003 - 2005 Nano-characterization of diluted magnetic semiconductors by scanning probe microscopy and spin polarized scanning tunneling microscopy
- 2003 - 2004 Study on Polycrystalline Nitride Semiconductors and Applications to Electric Field Emission Electron Sources and Visible Wavelength Region Fluorescence Substances
- 1999 - 2000 Study of Modulation Doped Quantum Wires.
- 1998 - 2000 ZnSe Molecular Beam Epitaxial Growth on Charge-Balanced GaAs Surfaces
- 1996 - 1997 Structural and Optical Characterization of a Quantum Wire
- 1996 - 1996 赤外線照射走査型トンネル顕微鏡による表面吸着原子種の同定
- 1993 - 1994 Insertion Effect of the Monolayr of Column II Elements at GaAs/Si Interface
- 1991 - 1992 Study of semiconductor heterointerface using low-energy electron transmission spectroscopy
- 1991 - 1992 量子細線構造の作製と評価
- 1989 - 1991 Molecular Beam Epitaxial Growth of GaAs on Porous Si
- 1988 - 1988 透過電子分光法による半導体表面上の金属超薄膜の微視的解析
- 1986 - 1986 多層量子井戸構造の作製と電子プローブ表面EXAFSによる評価
- 半導体デバイスの電気的性質のナノスケール評価
- 表面単原子の同定に関する研究
- 半導体ナノ構造の作製と評価
- 半導体ヘテロ界面の形成と評価
- SPM characterization of electrical properties in semiconductor devices
- Study of identification of single surface atom
- Fabrication and characterization of semiconductor nano structures
- Formation and characterization of semiconductor heterointerface
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Papers (82)：
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Takashi Hamano, Takayuki Matsuda, Yuya Asamoto, Masao Noma, Shigehiko Hasegawa, Michiru Yamashita, Keiichiro Urabe, Koji Eriguchi. Spectroscopic ellipsometry characterization of boron nitride films synthesized by a reactive plasma-assisted coating method. Applied Physics Letters. 2022. 120. 3. 031904-031904
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Satoru Kitsunai, Daiki Fujii, Toshihiro Yoshizumi, Shigehiko Hasegawa, Osamu Nakamura, Masamichi Sakai. Hall effect in ytterbium hydrides. Physics Letters, Section A: General, Atomic and Solid State Physics. 2021. 419
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Tomoya Higuchi, Masao Noma, Michiru Yamashita, Keiichiro Urabe, Shigehiko Hasegawa, Koji Eriguchi. Characterization of surface modification mechanisms for boron nitride films under plasma exposure. SURFACE AND COATINGS TECHNOLOGY. 2019. 377
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Mst. Sanjida Aktar, Masamichi Sakai, Shigehiko Hasegawa, Osamu Nakamura, Hiroyuki Awano. Entropy production by thermodynamic currents in ambipolar conductors with identical spin dynamics characteristics between holes and electrons. Applied Physics Express. 2019. 12. 5
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M. Maekawa, S. Sakai, S. Hagiwara, A. Miyashita, K. Wada, A. Kawasuso, A. Yabuuchi, S. Hasegawa. Magnetic Doppler broadening measurement on Gadolinium-doped GaN. AIP Conf. Proc. 2019. 2182. 050007
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MISC (349)：
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占部継一郎, 住平透, 野間正男, 山下満, 長谷川繁彦, 江利口浩二. Mechanical properties and surface sputtering of boron nitride films prepared by a reactive plasma assisted coating method. 日本航空宇宙学会中部・関西支部合同秋期大会講演論文集(CD-ROM). 2019. 56th
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Sakuraba T., Kitajima A., Oshima A., Hasegawa S., Nakamura O., Haruyama S., Kudo K., Sakai M., Honda Z., Kirigane T., et al. 7aPS-111 Anomalous temperature dependence in magnetotransport properties in Gd_xY_<1-x>H_2 (x=0.4). Meeting Abstracts of the Physical Society of Japan. 2014. 69. 0. 257-257
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Manabu Ishimaru, Manabu Ishimaru, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, Toyohiko J. Konno. Structure analysis of composition modulation in epitaxially-grown III-V semiconductor alloys. Japanese Journal of Applied Physics. 2013. 52. 11,Issue 1. 1-110120
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Manabu Ishimaru, Kotaro Higashi, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, Toyohiko J. Konno. Strong atomic ordering in Gd-doped GaN. Applied Physics Letters. 2012. 101. 10
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Sakai M., Honda Z., Hasegawa S., Kitajima A., Oshima A. 26pSA-8 Magneto- and Hall Resistivities Generated by Combination of Spin-Orbit Interaction and Applied Magnetic Field. Meeting Abstracts of the Physical Society of Japan. 2012. 67. 0. 750-750
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Patents (3)：
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不純物濃度測定方法(特許願第2000-66698号)
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不純物濃度測定方法, STM測定方法及びSTS測定方法(特許願第2001-68069号)
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(特許)化合物半導体のエピチキシャル成長方法 特許第3089732号
Books (10)：
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Growth temperature dependence of InAs islands grown on GaAs(001)substrates
13<sup>th</sup> Int. Conf. on Indium Phosphide and Related Materials Conference Proceedings 2001
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Characterization of a 0.1μm MOSFET using cross-sectional scanning tunneling microscopy
59th Device Research Conference, Conference Digest 2001
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STM study of annealing effects on Si nano ┣DBpn(/)-┫DB junctions fabricated by ion implantation
2000 MRS Fall Meeting Abstracts 2000
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Scanning tunneling microscopy study of InAs islanding and dissolving on GaAs(001)surfaces
2000 MRS Fall Meeting Abstracts 2000
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Formation of InAs and InGaAs quantum wires and dots on vicinal GaAs(110)substrates with giant steps by MBE(共著)
Ext. Abst. of Int. Conf. on Superlattices, Microstructures and Microdevices 1997
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Works (18)：
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強磁性窒化物半導体のナノ構造における磁性制御に関する研究
2009 -
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希土類元素添加の精密制御による物性・機能性の開拓
2009 -
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室温強磁性窒化物物半導体ナノ構造とナノスピントロニクスデバイス応用に関する研究
2009 -
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InGaNベース強磁性半導体による長波長円偏光半導体レーザ創製に関する研究
2009 -
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難固溶不純物原子添加半導体のナノ量子構造に関する実験的研究
2008 -
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Professional career (1)：
- (BLANK) (Osaka University)
Awards (4)：
- 2006 - Best Paper Award
- 2006 - Best Paper Award
- 1994 - 熊谷記念真空科学論文賞
- 1989 - 井上研究奨励賞
Association Membership(s) (4)：
米国物理学会
, 日本真空協会
, 日本物理学会
, 応用物理学会
