J-GLOBAL ID:200901048426737729   Update date: May. 29, 2020

TAKANO Yasushi

タカノ ヤスシ | TAKANO Yasushi
Affiliation and department:
Job title: Associate Professor
Other affiliations (2):
  • Shizuoka University  Faculty of Engineering - Department of Electronics and Materials Science 
  • Shizuoka University  Graduate School of Integrated Science and Technology Department of Engineering - Electronics and Materials Science Course 
Homepage URL  (1): http://www2u.biglobe.ne.jp/~yasusi/ztaka/
Research field  (1): Electric/electronic material engineering
Research keywords  (3): oxide films ,  compound semiconductor thin films ,  solar cell
Papers (49):
  • Takano Yasushi. Fabrication of SnS-MgSnO heterojunction solar cells using vacuum thermal deposition and sol-gel method. Materials Letters. 2018. 228. 414-417
  • Ishida Akihiro. Interband absorption in PbTe/PbSnTe-based type-II superlattices. Appl. Phys. Lett. 2018. 133. 7. 072103-3pages
  • R. Hayakawa, Y. Takano. Preparation of SnS films in chemical solution usingmicrowave irradiation. THIN SOLID FILMS. 2017. 636. (num). 171-176
  • Atsushi Sugita, Kazuma Ito, Yasuaki Sato, Ryota Suzuki, Kohei Sato, Tetsuo Narumi, Nobuyuki Mase, Yasushi Takano, Tomonori Matsushita, Shigeru Tasaka, Yoshimasa Kawata. The role of chemisorption for push-pull chromophores on SiO2 surfaces in non-electrically poling host-guest NLO polymers. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY. 2017. 340. (num). 35-45
  • 責任著者, Yohei Fujita, 共著者]Yasushi Takano, Yoku Inoue, Masatomo Sumiya, Shunro Fuke, Takayuki Nakano. Double-polarity selective area growth of GaN metal organic vapor phase epitaxy by using carbon mask layers. Japanese Journal of Applied Physics. 2013. 52. 8. 08JB26
MISC (3):
  • 責任著者]K.Kobayashi, 共著者]T.Uranishi, Y.Takano他. Estimation of residual strain and threading dislocation density of In-doped GaAs layers on Si substrate. Extended abstracts of the 20th electronic materials symposium. 2001. 189. 190
  • 責任著者]T.Uranishi, 共著者]T.Kururi, Y.Takano他. Reduction of threading dislocation density of GaAs on Si by doping In. Extended Abstracts of the 19th Electronic Materials Symposium. 2000. 81. 82
  • 責任著者]T.Ito, 共著者]M.Sumiya, Y.Takano, S.Fuke他. Effects of Substrate Nitridation and AlN Buffer Layer on the properties of GaN on Sapphire. Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting. 1999. 178-181
Books (1):
  • DEFECT AND DIFFUSION FORUM Influence of In-doping on the crystalline quality of GaAs epilayers on Si substrates
Education (4):
  • - 1987 Shizuoka University Graduate School, Division of Electronic Science and Technology Electronic Material Engineering
  • - 1984 Shizuoka University Graduate School, Division of Engineering Electronic Engineering
  • - 1982 Shizuoka University Faculty of Engineering
  • - 1982 Shizuoka University Faculty of Engineering Electronic Engineering
Professional career (2):
  • Doctor of Technology (Shizuoka University)
  • Master of Technology (Shizuoka University)
Work history (2):
  • 2002 - 現在 Shizuoka University
  • 1987 - 2001 Toyohashi University of Technology
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