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J-GLOBAL ID:200901049800841647   Update date: Jan. 21, 2025

Uno Kazuyuki

ウノ カズユキ | Uno Kazuyuki
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Affiliation and department:
Job title: Lecturer
Research field  (2): Crystal engineering ,  Electric/electronic material engineering
Research keywords  (7): Gallium oxide ,  Mist Chemical Vapor Deposition ,  Oxide Semiconductors ,  結晶成長 ,  化合物半導体 ,  光デバイス ,  半導体ナノ構造
Research theme for competitive and other funds  (6):
  • 2024 - 2027 α型酸化ガリウムの特異な緩和機構と光導電特性の研究
  • 2018 - 2021 Study on Properties of Quantum Heterostructures by Using High Quality alpha-type Gallium Oxide Thin Films
  • 2006 - 2007 Study of the Optical Processes in Nitride Alloy Semiconductors
  • 2004 - 2005 Study on the Optical Properties of Superlattices formed by Alloy Semiconductors
  • 2003 - 電気化学的手法による酸化物半導体結晶薄膜の成長
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Papers (59):
  • 宇野和行, 田中一成, 尾友響. 深紫外光検出器を目指した酸化ガリウム薄膜の水晶基板上ミストCVD成長. 材料. 2024. 73. 10. 778-784
  • Kazuyuki Uno, Keishi Yamaoka. Improvement of Photoconductivity in a-Oriented α-Ga2O3 Thin Films Grown on Sapphire Substrates by Mist Chemical Vapor Deposition. physica status solidi (b). 2024. 261. 7. 2300463
  • Kazuyuki Uno, Marika Ohta. Control of Al composition of mist chemical vapor deposition grown α-(AlGa)2O3 alloy thin films by acetylacetonation of Al ion. Japanese Journal of Applied Physics. 2023. 62. SF1026
  • Yoshio Nakahara, Ken-ichiro Yamane, Tomoaki Nakagami, Kazuyuki Uno, Ichiro Tanaka. Polysilsesquioxane Gate Dielectric Layers Cured by Ultra-Violet Light Irradiation Using Thiol-Ene Reaction for Organic Thin-Film Transistors. physica status solidi (a). 2023
  • Marika Ohta, Hiroto Tamura, Kazuyuki Uno. Growth of α-(AlGa)2O3 alloy thin films on c-sapphire substrates by mist chemical vapor deposition using acetylacetonated Al and Ga solutions. Applied Physics Express. 2022. 15. 5. 055502
more...
Patents (10):
  • 光検出器
  • 積層構造体、半導体装置及び積層構造体の製造方法
  • 酸化ガリウム半導体膜及び原料溶液
  • 結晶性酸化物膜
  • 積層構造体の製造方法
more...
Books (1):
  • 半導体用語大辞典
    日刊工業新聞社 1999 ISBN:4526043419
Lectures and oral presentations  (141):
  • ミストCVD法の結晶成⻑機構:アセチルアセトナート錯体の第一原理分子動力 学計算による熱的安定性評価
    (2025年第72回応用物理学会春季学術講演会 2025)
  • ミストCVD法における錯体化学と表面化学反応に基づく酸化物半導体の薄膜結晶成長
    (第11回工学研究シーズ合同発表会 2024)
  • 13族アセチルアセトナート錯体の第一原理計算による構造解析とミストCVD成長
    (日本材料学会半導体エレクトロニクス部門委員会2024年度第2回研究会 2024)
  • Growth of Amorphous Ga<sub>2</sub>O<sub>3</sub> on Quartz Substrates by Mist Chemical Vapor Deposition
    (International Workshop on Gallium Oxide and Related Materials 2024)
  • Amorphous Ga2O3 thin films grown on quartz substrates and their photoconductive properties
    (2024)
more...
Works (2):
  • IRCA (Internet Relay Chat Adapter)
    宇野和行 1993 -
  • IRCW (Internet Relay Chat for Windows)
    宇野和行 1993 -
Education (2):
  • 1990 - 1995 Kyoto University Department of electrical engineering
  • 1986 - 1990 Kyoto University Faculty of Engineering
Professional career (1):
  • Doctor of Engineering, Kyoto University (Kyoto University)
Work history (6):
  • 2008/04 - 現在 Wakayama University Faculty of Systems Engineering
  • 2005/04 - 2008/03 Wakayama University Faculty of Systems Engineering Associate Professoor
  • 2002/04 - 2005/03 Wakayama University Faculty of Systems Engineering Lecturer
  • 1997/04 - 2002/03 Wakayama University Faculty of Systems Engineering assistant professor
  • 1995/09 - 1997/03 New Energy and Industrial Technology Development Organization
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Committee career (26):
  • 2023/09 - 現在 The 5th Wordshop of Gallium Oxide and Related Materials Technical Program Committee
  • 2012/09 - 現在 社団法人日本材料学会 半導体エレクトロニクス部門委員会委員
  • 2019/09 - 2023/10 The 4th International Workshop on Gallium Oxide and Related Materials Executive committee member
  • 2018/04 - 2020/03 The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS-9) Program Committee Member
  • 2017/04 - 2020/03 Compound Semiconductor Week 2019 Vice Chair of Steering Committee
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Awards (3):
  • 2022/10 - 和歌山大学システム工学部 システム工学部論文賞
  • 2021/09 - 和歌山大学システム工学部 グッドレクチャー賞(電磁気学I)
  • 2020/10 - 和歌山大学システム工学部 システム工学部論文賞
Association Membership(s) (3):
日本材料学会 ,  The Japan Sciety of Vacuum and Surface Science ,  The Japan Society of Applied Physics
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