Ichikawa Toshihiro

イチカワトシヒロ | Ichikawa Toshihiro

Research field (1)： Semiconductors, optical and atomic physics

Research theme for competitive and other funds (2)：

MISC (24)：

Toshihiro Ichikawa, Takeshi Waragaya. Indium-induced superstructures formed on Si(110) surfaces. APPLIED SURFACE SCIENCE. 2009. 256. 4. 1136-1139
市川禎宏, 市川禎宏. Ge(110)表面の再構成構造. 表面科学. 2005. 26. 6
市川禎宏, Toshihiro Ichikawa. Initial growth of Sn layer on Si(111) surfaces: Formation of (2 sqrt 3 x 2 sqrt 3)R30 degree and long-period superstructures. Recent Res. Devel. Crystal Growth. 2005. 4
Ichikawa Toshihiro. Initial growth of Sn layer on Si(111) surfaces: Formation of (2 sqrt 3 x 2 sqrt 3)R30 degree and long-period superstructures. Recent Res. Devel. Crystal Growth. 2005. 4
Toshihiro Ichikawa. Atomic geometry of the Ge(1 1 0)c(8 × 10) structure. Surface Science. 2004. 560. 1-3. 205-212

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Work history (1)：

Association Membership(s) (2)：

日本物理学会 , 応用物理学会

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