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J-GLOBAL ID:200901063603910389   Update date: Sep. 13, 2024

Sakashita Mitsuo

Sakashita Mitsuo
Affiliation and department:
Job title: Assistant Professor
Research field  (3): Other ,  Other ,  Thin-film surfaces and interfaces
Research keywords  (7): Sn ,  Ge ,  Si ,  表面・界面物性 ,  欠陥評価 ,  IV族半導体 ,  半導体工学
Research theme for competitive and other funds  (6):
  • 2014 - 2015 機能融合デバイス構築に向けたSn系IV族半導体薄膜の材料設計
  • 2010 - 2013 Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices
  • 2009 - 2011 シリコン系エンジニアリングサブストレート実現のための材料・物性・構造制御技術
  • 2006 - 2009 Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system
  • 2007 - 2008 Development of carrier separation technique by conductive atomic force microscopy
Show all
Papers (150):
  • Nagano Jotaro, Ikeguchi Shota, Doi Takuma, Sakashita Mitsuo, Nakatsuka Osamu, Shibayama Shigehisa. Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023. 163
  • Hashimoto Kaoru, Shibayama Shigehisa, Asaka Koji, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu. Self-organized Ge1-x Sn (x) quantum dots formed on insulators and their room temperature photoluminescence. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. 7
  • Fujimoto Kazuaki, Kurosawa Masashi, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu. Lattice-matched growth of high-Sn-content (x similar to 0.1) Si1-x Sn x layers on Si1-y Ge y buffers using molecular beam epitaxy. APPLIED PHYSICS EXPRESS. 2023. 16. 4
  • Kazuya Okada, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Masashi Kurosawa. Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing. Mater. Sci. Semicond. Proc. 2023. 161. 107462
  • Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka. Ge1-xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping. Mater. Sci. Semicond. Proc. 2023. 176. 108302
more...
MISC (67):
  • S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, et al. Growth and applications of GeSn-related group-IV semiconductor materials. 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016. 2016. 37-38
  • 志村 洋介, 竹内 和歌奈, 坂下 満男, 黒澤 昌志, 中塚 理, 財満 鎭明. 招待講演 Sn系IV族半導体混晶薄膜の成長と物性評価 (シリコン材料・デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2016. 116. 1. 23-26
  • 志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明. Sn系IV族半導体混晶薄膜の成長と物性評価. 信学技報 IEICE Technical Report. 2016. 116. 2. 23-26
  • NAKATSUKA Osamu, DENG Yunsheng, SUZUKI Akihiro, SAKASHITA Mitsuo, TAOKA Noriyuki, ZAIMA Shigeaki. Formation of Epitaxial Metal/Germanium Contacts and Control of Electric Conduction Property at the Interface. Technical report of IEICE. SDM. 2015. 114. 469. 17-22
  • Suzuki Akihiro, Asaba Shunsuke, Yokoi Jun, Kurosawa Masashi, Kato Kimihiko, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki. Alleviation of Fermi level pinning of Sn/Ge contact. Technical report of IEICE. SDM. 2014. 114. 88. 11-16
more...
Lectures and oral presentations  (177):
  • Electrical activation of implanted phosphorus in GeSn epitaxial layers grown on Si(111) substrate
    (14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023)
  • Thermoelectric properties of Sb-doped Ge1-x-ySixSny ternary alloy layers lattice matched to GaAs substrates
    (14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023)
  • A new challenge in group-IV materials: energy harvesting application & 2D crystal synthesizing
    (14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023)
  • Crystal Growth Technology of GeSn-related Group-IV Heteroepitaxial Layers
    (3rd Nucleation and Growth Research Conference (NGRC) 2023)
  • Sputtering Heteroepitaxy of Ge0.75Sn0.25 Layer on InP(001) Substrate
    (2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY 2023)
more...
Education (1):
  • Meijo University
Work history (3):
  • 2017/04/01 - 現在 Nagoya University Graduate School of Engineering Materials Physics 1 Assistant Professor
  • 2007/04/01 - 2017/03/31 Nagoya University Graduate School of Engineering Department of Crystalline Materials Science Assistant Professor
  • 2007/03/31 - Nagoya University Graduate School of Engineering Department of Crystalline Materials Science Assistant
Committee career (8):
  • 2023 International Conference on Solid State Devices and Materials, Steering Committee (Secretary)
  • 2022 International Conference on Solid State Devices and Materials, Steering Committee
  • 2019 International Conference on Solid State Devices and Materials Steering Committee (Secretary)
  • ISPlasma2019/IC-PLANTS2019 Executive Committee (Secretary)
  • 2018 International Conference on Solid State Devices and Materials Steering Committee
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Awards (1):
  • MNC2004 Award for Outstanding Paper Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals
Association Membership(s) (2):
電子情報通信学会 ,  応用物理学会
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