Rchr
J-GLOBAL ID:200901063603910389
Update date: Sep. 13, 2024 Sakashita Mitsuo
Sakashita Mitsuo
Affiliation and department: Job title:
Assistant Professor
Research field (3):
Other
, Other
, Thin-film surfaces and interfaces
Research keywords (7):
Sn
, Ge
, Si
, 表面・界面物性
, 欠陥評価
, IV族半導体
, 半導体工学
Research theme for competitive and other funds (6): Papers (150): -
Nagano Jotaro, Ikeguchi Shota, Doi Takuma, Sakashita Mitsuo, Nakatsuka Osamu, Shibayama Shigehisa. Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023. 163
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Hashimoto Kaoru, Shibayama Shigehisa, Asaka Koji, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu. Self-organized Ge1-x Sn (x) quantum dots formed on insulators and their room temperature photoluminescence. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. 7
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Fujimoto Kazuaki, Kurosawa Masashi, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu. Lattice-matched growth of high-Sn-content (x similar to 0.1) Si1-x Sn x layers on Si1-y Ge y buffers using molecular beam epitaxy. APPLIED PHYSICS EXPRESS. 2023. 16. 4
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Kazuya Okada, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Masashi Kurosawa. Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing. Mater. Sci. Semicond. Proc. 2023. 161. 107462
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Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka. Ge1-xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping. Mater. Sci. Semicond. Proc. 2023. 176. 108302
more... MISC (67): -
S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, et al. Growth and applications of GeSn-related group-IV semiconductor materials. 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016. 2016. 37-38
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志村 洋介, 竹内 和歌奈, 坂下 満男, 黒澤 昌志, 中塚 理, 財満 鎭明. 招待講演 Sn系IV族半導体混晶薄膜の成長と物性評価 (シリコン材料・デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2016. 116. 1. 23-26
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志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明. Sn系IV族半導体混晶薄膜の成長と物性評価. 信学技報 IEICE Technical Report. 2016. 116. 2. 23-26
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NAKATSUKA Osamu, DENG Yunsheng, SUZUKI Akihiro, SAKASHITA Mitsuo, TAOKA Noriyuki, ZAIMA Shigeaki. Formation of Epitaxial Metal/Germanium Contacts and Control of Electric Conduction Property at the Interface. Technical report of IEICE. SDM. 2015. 114. 469. 17-22
- Suzuki Akihiro, Asaba Shunsuke, Yokoi Jun, Kurosawa Masashi, Kato Kimihiko, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki. Alleviation of Fermi level pinning of Sn/Ge contact. Technical report of IEICE. SDM. 2014. 114. 88. 11-16
more... Lectures and oral presentations (177): -
Electrical activation of implanted phosphorus in GeSn epitaxial layers grown on Si(111) substrate
(14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023)
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Thermoelectric properties of Sb-doped Ge1-x-ySixSny ternary alloy layers lattice matched to GaAs substrates
(14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023)
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A new challenge in group-IV materials: energy harvesting application & 2D crystal synthesizing
(14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023)
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Crystal Growth Technology of GeSn-related Group-IV Heteroepitaxial Layers
(3rd Nucleation and Growth Research Conference (NGRC) 2023)
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Sputtering Heteroepitaxy of Ge0.75Sn0.25 Layer on InP(001) Substrate
(2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY 2023)
more... Education (1): Work history (3): - 2017/04/01 - 現在 Nagoya University Graduate School of Engineering Materials Physics 1 Assistant Professor
- 2007/04/01 - 2017/03/31 Nagoya University Graduate School of Engineering Department of Crystalline Materials Science Assistant Professor
- 2007/03/31 - Nagoya University Graduate School of Engineering Department of Crystalline Materials Science Assistant
Committee career (8): - 2023 International Conference on Solid State Devices and Materials, Steering Committee (Secretary)
- 2022 International Conference on Solid State Devices and Materials, Steering Committee
- 2019 International Conference on Solid State Devices and Materials Steering Committee (Secretary)
- ISPlasma2019/IC-PLANTS2019 Executive Committee (Secretary)
- 2018 International Conference on Solid State Devices and Materials Steering Committee
- ISCSI-VII/ISTDM2016 Steering Committee
- ISPlasma2016/IC-PLANTS2016 Executive Committee
- 2011 International Conference on Solid State Devices and Materials Steering Committee
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Awards (1): - MNC2004 Award for Outstanding Paper Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals
Association Membership(s) (2): Return to Previous Page