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Rchr
J-GLOBAL ID：200901072122668281
Update date: Jan. 16, 2025 Harada Yoshiyuki
ハラダ ヨシユキ | Harada Yoshiyuki
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Osaka Institute of Technology Faculty of Engineering, General Education Course
About Osaka Institute of Technology Faculty of Engineering, General Education Course
Research keywords (3)：
固体物性(]G0001[)(光物性・半導体・誘電体)
, Semiconductor and Dielectrics)
, Solid-State Physics (]G0001[)(Optical Properties
Research theme for competitive and other funds (2)： - 1995 - ワイドギャップ半導体の光学的性質に関する研究
- 1995 - Study on optical properties of wide-gap semiconductors
- Isu Ryota, Maeda Shoji, Fujimoto Akira, Perini Christopher J., Terasawa Daiju, Fukuda Akira, Koyama Masatoshi, Harada Yoshiyuki, Koike Kazuto, Yano Mitsuaki, et al. Characteristics of Gas Sensors Based on Indium Oxide Deposited Graphene. JSAP Annual Meetings Extended Abstracts. 2020. 2020.1. 3358-3358
- Maeda Shoji, Isu Ryota, Perini Christopher, Terasawa Daiju, Fukuda Akira, Koyama Masatoshi, Fujimoto Akira, Harada Yoshiyuki, Koike Kazuto, Yano Mitsuaki, et al. Characteristics of Gas Sensors Based on Molybdenum Disulfide/Graphene van der Waals Heterostructure. JSAP Annual Meetings Extended Abstracts. 2019. 2019.2. 3915-3915
- Maeda Shoji, Perini Christopher, Kaneko Toyokazu, Terasawa Daiju, Fukuda Akira, Koyama Masatoshi, Fujimoto Akira, Harada Yoshiyuki, Koike Kazuto, Yano Mitsuaki, et al. Fabrication and Electrical Properties of MoS2 Transistors for Application of Gas Sensor. JSAP Annual Meetings Extended Abstracts. 2019. 2019.1. 3589-3589
- Fujimoto Akira, Maeda Shoji, Isu Ryota, Sakamoto Kei-ichi, Matano Kentaro, Terasawa Daiju, Fukuda Akira, Koyama Masatoshi, Harada Yoshiyuki, Koike Kazuto, et al. van der Waals Heterostructure Consisting of Molybdenum Disulfide and Graphene for Application of Gas Sensor. Meeting Abstracts of the Physical Society of Japan. 2019. 74.2. 982-982
- Akira Fujimoto, Christopher J. Perini, Daiju Terasawa, Akira Fukuda, Yoshiyuki Harada, Shigehiko Sasa, Mitsuaki Yano, Eric M. Vogel. Disorder and Weak Localization near Charge Neutral Point in Ti-cleaned Single-Layer Graphene. Phys. Status Solidi B. 2019. 1800541. 1-8
- Ryotaro Sekine, Mizuki Uenomachi, Hiroki Asafusa, Kazuyasu Tokiwa, Kenji Shimazoe, Hiroyuki Takahashi, Yoshiyuki Harada, Akira Fujimoto, Takeshi Hirai, Shiro Sakuragi. Growth and Characterization of CdTe Single Crystals Prepared by the "Liquinert Processed" Vertical Bridgman Method for Radiation Detectors. Crystal Growth and Design. 2019. 19. 11. 6218-6223
- YODO Tokuo, SHIMADA Teruya, TAGAWA Sumito, NISHIMOTO Ryo, HIDAKA Shiro, ISHII Keita, SEGAWA Hroshi, HIRAKAWA Junichi, HARADA Yoshiyuki. Effects of damage reduction due to N_2^+ ion on growth of InN film on Si substrate by ECR-MBE method. IEICE technical report. 2006. 106. 271. 121-125
- HARUTA Msakazu, FUJIYOSHI Takanori, KIHARA Shintaro, SUEYOSHI Tetsuro, YOSHIZAWA Masahito, TAKAHASHI Terukazu, IRIUDA Hiroki, HARADA Yoshitomo, AWAJI Satoshi, WATANABE Kazuo, et al. Flux pinning properties of as-grown MgB_2 thin films with high J_c prepared by MBE method. 2006. 74. 185-185
- YODO Tokuo, TAMOTO Kiyonaga, SHIMADA Teruya, NIGUCHI Hiroyuki, FUJII Youhei, MAOKA Takefumi, HARADA Yoshiyuki. Epitaxial growth of hexagonal InN films on GaAs substrates by electron cyclotron plasma-assisted MBE. IEICE technical report. Electron devices. 2005. 105. 90. 33-37
- YODO Tokuo, TAMOTO Kiyonaga, SHIMADA Teruya, NIGUCHI Hiroyuki, FUJII Youhei, MAOKA Takefumi, HARADA Yoshiyuki. InN films on Sapphire(0001) substrate grown by ECR-plasma assisted MBE. Technical report of IEICE. LQE. 2004. 104. 361. 61-66
- 遠赤外光を用いたClをドープしたZnSeの深い欠陥の格子緩和現象の研究
第23回半導体国際会議プロシーディング 1996 - Far-infrared Study on Lattice Relaxation Phenomenon of Deep Defects in Cl-doped ZnSe
Proceedings of the 23rd International Conference on the Physics of Semiconductors 1996 - 補償化したGeにおける不均一電場による内部シュタルク効果
第19回赤外とミリ波国際会議 1994 - Internal Stark Effect by Inhomogeneous Electric Fields in Compensated Ge
Proceedings of the 19th International Conference on Infrared and Millimeter Waves 1994 - Bi系高Tc超伝導体の赤外吸収
高超伝導体の電子物性と構造(edited by T.Oguchi, K.Kadowaki and T.Sasaki) 1992
- - 1995 Osaka University
- - 1995 Osaka University Graduate School, Faculty of Science Physics
- - 1992 Osaka Prefecture University
- - 1992 University of Osaka Prefecture Graduate School, Division of General Science Material science
- - 1990 Kyoto University of Education Faculty of Education
Show all
- Doctor(Natural Science) (Osaka University)
- 1995 - 1996 理化学研究所 奨励研究員
- 1995 - 1996 Researcher,
- "RIKEN"
- The Institute of Physical and Chemical Research.
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.
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