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J-GLOBAL ID:201201069636604600   Update date: Dec. 13, 2023

Nishitani Tomohiro

Nishitani Tomohiro
Research field  (1): Particle, nuclear, cosmic-ray, and astrophysics - experiment
Research keywords  (3): electron source ,  半導体フォトカソード ,  電子ビーム
Research theme for competitive and other funds  (6):
  • 2019 - 2022 Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples
  • 2014 - 2017 高速1ショット観測を実現するフォトカソード電子源の開発
  • 2011 - 2011 量子効果を利用した高耐久半導体電子源による高輝度電子ビームの実現
  • 2009 - 2011 Superlattice semiconductor photocathode for the electron beam source with a high brightness and a long NEA-surface lifetime.
  • 2006 - 2007 革新的高輝度の電子ビームを実現する超格子電子源の研究
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Papers (39):
  • Yusuke Inoue, Tomohiro Nishitani, Anna Honda, Daiki Sato, Haruka Shikano, Atsushi Koizumi, Yoshio Honda, Daisuke Ichihara, Akihiro Sasoh. Investigation on Applying an InGaN Photocathode with Negative Electron Affinity for Electric Propulsion. TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES. 2023. 66. 1. 10-13
  • Atsushi Koizumi, Daiki Sato, Haruka Shikano, Hokuto Iijima, Tomohiro Nishitani. Dependence of electron emission current density on excitation power density from Cs/O-activated negative electron affinity InGaN photocathode. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2022. 40. 6
  • Tomohiro Nishitani, Yuta Arakawa, Shotaro Noda, Atsushi Koizumi, Daiki Sato, Haruka Shikano, Hokuto Iijima, Yoshio Honda, Hiroshi Amano. Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2022. 40. 6
  • Daiki Sato, Haruka Shikano, Atsushi Koizumi, Tomohiro Nishitani. Time response measurement of pulsed electron beam from InGaN photocathode. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2022. 40. 6
  • M. Kashima, S. Ishiyama, D. Sato, A. Koizumi, H. Iijima, T. Nishitani, Y. Honda, H. Amano, T. Meguro. Adsorption structure deteriorating negative electron affinity under the H2O environment. Applied Physics Letters. 2022. 121. 18
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MISC (59):
  • Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi. Dependence of quantum efficiency on InGaN thickness in InGaN photocathode. JSAP Annual Meetings Extended Abstracts. 2020. 2020.1. 1516-1516
  • Morita Iori, Ishikawa Fumitaro, Nishitani Tomohiro, Tabuchi Masao. MBE growth of photocathode using AlGaAs-based semiconductor material. JSAP Annual Meetings Extended Abstracts. 2020. 2020.1. 3005-3005
  • Morita Iori, Ishikawa Fumitaro, Nishitani Tomohiro, Tabuchi Masao. MBE growth of AlGaAs superlattice for its application to photocathode. JSAP Annual Meetings Extended Abstracts. 2019. 2019.2. 3456-3456
  • Sato Daiki, NIshitani Tomohiro, Honda Yoshio, Amano Hiroshi. The annealing effect for the N2-exposed surface of the semiconductor photocathode. JSAP Annual Meetings Extended Abstracts. 2019. 2019.1. 1474-1474
  • Sato Daiki, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi. The annealing effect for the air-exposed surface on the GaN semiconductor photocathode. JSAP Annual Meetings Extended Abstracts. 2018. 2018.2. 1571-1571
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Books (1):
  • スピン偏極電子源に用いるGaAs-GaAsP歪み超格子フォトカソードの開発
    [出版者不明] 2004
Education (2):
  • - 2004 Nagoya University Graduate School, Division of Natural Science
  • - 1998 Tokyo Metropolitan University Faculty of Science
Professional career (1):
  • Doctor(Science) (Nagoya University)
Work history (6):
  • 2022/04 - 現在 名古屋大学 未来材料・システム研究所 未来エレクトロニクス集積研究センター 客員准教授
  • 2015/07 - 現在 Photo electron Soul Inc.
  • 2018/04 - 2022/03 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Materials Nano-Characterization Section Designated associate professor
  • 2017/04/01 - 2018/03/31 Nagoya University Synchrotron Radiation Research Center Division of Light Equipment Designated associate professor
  • 2016/04/01 - 2017/03/31 Nagoya University Synchrotron Radiation Research Center Division of Light Equipment Designated lecturer
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