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J-GLOBAL ID：201301036787591545   Update date: Nov. 13, 2024

Okumura Hironori

オクムラ ヒロノリ | Okumura Hironori
Affiliation and department：
University of Tsukuba Faculty of Pure and Applied Sciences

About University of Tsukuba Faculty of Pure and Applied Sciences


Job title： Assistant Professor
Homepage URL  (1)： https://sites.google.com/view/okumura
Research field  (2)： Crystal engineering ,  Electric/electronic material engineering
Research theme for competitive and other funds  (19)：
  • 2024 - 2027 Development of vacuum UV light emitting devices with controllable wavelength
  • 2023 - 2027 Fabrication of vertical AlN devices
  • 2024 - 2025 Development of an Innovative Contact Lens Device for Measurement and Removal of Reactive Oxygen Species in Advanced Dry Eye Treatment
  • 2021 - 2025 Activation mechanism of implanted impurities in III-Nitrides
  • 2019 - 2024 Power devices using III-Oxides
Show all
Papers (42)：
  • Itabashi, Kosuke, Fujii, S, Imura, M, Isobe, T, Miyahara, M, Nishinaga, J, OKUMURA, Hironori, Togawa, M. Study of radiation tolerance of Cu (In, Ga) Se2 detector. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2024. 1067
  • OKUMURA, Hironori, Varley, Joel B. MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates. Japanese Journal of Applied Physics. 2024. 63. 075502
  • Togawa, Manabu, Fujii, S, Imura, M, Itabashi, K, Isobe, T, Miyahara, M, Nishinaga, J, Okumura, Hironori. The CIGS semiconductor detector for particle physics. Journal of Instrumentation. 2024. 19. 5. C05042
  • Okumura, Hironori, Fassion, Andréa, Mannequin, Cédric. Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 substrates by molecular beam epitaxy. Japanese Journal of Applied Physics. 2024. 63. 5. 055502
  • Jia, Yun, Sato, Sora, Traore, Aboulaye, Morita, Ryo, Broccoli, Erwann, Florena, Fenfen Fenda, Islam, Muhammad Monirul, Okumura, Hironori, Sakurai, Takeaki. Electrical properties of vertical Cu2O/β-Ga2O3 (001) p-n diodes. AIP ADVANCES. 2023. 13. 10
ｍore...
Patents (2)：
  • Fabrication of transistors
  • 導電性AlNエピタキシャル膜付き基板及びその製造方法
Books (2)：
  • Other Research Environment
    The Surface Science Society of Japan 2016
  • Optronics
    2015
Lectures and oral presentations  (54)：
  • Power electronics (Ga2O3) device
    (Baja-Tsukuba Collaborative Seminar)
  • Development of low-cost power devices using Al2O3
    (Innovation for Cool Earth Forum)
  • Development of novel materials for high efficiency and low-cost power electronics
    (Tsukuba Global Science Week)
  • 地球環境問題解決に向けた物質科学の挑戦
    (Tsukuba Global Science Week)
  • GaNプロセスの現状と放射線検出器の作製
    (Platform B (Silicon) meeting)
ｍore...
Education (2)：
  • 2007 - 2012 Kyoto University Graduate School of Engineering Department of Electronic Science and Engineering
  • 2003 - 2007 Kyoto University Faculty of Engineering School of Electrical & Electronic Engineering
Professional career (1)：
  • Ph.D, engineering (Kyoto University)
Work history (5)：
  • 2018/04 - 現在 University of Tsukuba Faculty of Pure and Applied Sciences Assistant Professor (Tenure)
  • 2016/04 - 2018/03 MIT EECS visiting researcher
  • 2015/04 - 2016/03 EPFL Physics visiting researcher
  • 2014/04 - 2015/03 NTT Basic research laboratory Thin film group Post-doc
  • 2012/04 - 2014/03 UCSB Materials Post-doc (JSPS fellowship)
Committee career (3)：
  • 2020/01 - 2022/12 International Conference on Solid State Devices and Materials Program Committee, Area 4
  • 2021/04 - 2022/11 International Workshop on Gallium Oxide and Related Materials Program Committee
  • 2020/03 - 2022/02 Electronic Materials Symposium Secretaries
Awards (3)：
  • 2021/03/08 - CGCT-8 CGCT Young Scientist Award
  • 2020/11 - University of Tsukuba Young Faculty Award in University of Tsukuba
  • 2019/09/03 - SSDM Young Researcher Award
Association Membership(s) (4)：
JSAP Ionization Radiation Division ,  Japanese Society of Applied Physics ,  Japanese Association for Crystal Growth ,  Material Research Society
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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