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J-GLOBAL ID：201501077364456709 Update date: Jan. 10, 2025

ASUBAR JOEL

アスバルジョエル | ASUBAR JOEL

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Homepage URL (1)： https://sites.google.com/view/uf-electron-device-lab/home-%E3%83%9B%E3%83%BC%E3%83%A0

Research field (5)： Electronic devices and equipment , Semiconductors, optical and atomic physics , Thin-film surfaces and interfaces , Crystal engineering , Electric/electronic material engineering

Research keywords (8)： Metal Insulator Semiconductor Structures , Gallium Nitride , MOCVD , AlGaN/GaN HEMTs , Spintronics , Electronic Devices , Heterostructures , MBE growth

Research theme for competitive and other funds (7)：

2023 - 2026 Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors
2023 - 2026 Gate insulator deposition process for GaN-based MOS devices using mist-CVD technique
2019 - 2022 Highly Stable Normally-off GaN-based transistors via Structures and Process
2019 - 2022 Surface passivation and insulated gate structures for nitride-based semiconductor devices using mist-CVD method
2019 - 2022 Study on high-voltage and high-power nitrided-based transistor amplifiers operated at quasi-millimeter wave frequencies

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Papers (110)：

RT Ahmed, S Terai, K Sekiyama, T Igarashi, A Baratov, M Kuzuhara, JT Asubar. Impact of Rapid Thermal Annealing Temperature of Cu-based ohmic stack on Performance of GaN MIS-HEMTs. 2024 IEEE IMFEDK Tech. Dig. 2024. 2024. 1
S Yamao, K Sekiyama, S Terai, T Igarashi, M Ishiguro, A Baratov, M Kuzuhara, JT Asubar. Recessed-gate GaN-based MIS-HEMTs Performance Dependence on Recess Depth. 2024 IEEE IMFEDK Tech. Dig. 2024. 2024. 1
R Kato, S Terai, K Sekiyama, T Igarashi, A Yamamoto, M. Kuzuhara, JT Asubar. Improving the ZrO2/re-grown AlGaN interfaces by insulator Post Deposition Anealing for MIS-HEMTs Applications. 2024 IEEE IMFEDK Tech. Dig. 2024. 2024. 1
Keigo Bito, Masaki Ishiguro, Hadirah A Radzuan, Hikaru Hiroshige, Tomohiro Motoyama, Yusui Nakamura, Joel T Asubar, Zenji Yatabe. Interface state density in mist chemical vapor deposited Al2O3/AlGaN/GaN structure. Japanese Journal of Applied Physics. 2024. 63. 080905-1
Toi Nezu, Shogo Maeda, Ali Baratov, Suguru Terai, Kishi Sekiyama, Itsuki Nagase, Masaaki Kuzuhara, Akio Yamamoto, Joel T. Asubar. Effect of Ultra-Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures. Phys. Status Solidi A. 2024

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Books (2)：

MBE-grown ZnSnAs2 Epitaxial Films: A Ferromagnetic Semiconductor Host Prospect (invited book chapter), “Chalcopyrite: Chemical Composition, Occurrence and Uses”
Nova Science Publishers, Inc., (Hauppauge) New York 2014
Electronics Engineering Reviewer For Today’s ECE Licensure Examination
Padilla Engineering and Review Center Publishing and Tutorial Center 2001

Lectures and oral presentations (205)：

Impact of Rapid Thermal Annealing Temperature of Cu-based ohmic stack on Performance of GaN MIS-HEMTs
(2024 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK 2024) 2024)
Recessed-gate GaN-based MIS-HEMTs Performance Dependence on Recess Depth
(2024 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK 2024) 2024)
Improving the ZrO2/re-grown AlGaN interfaces by insulator Post Deposition Anealing for MIS-HEMTs Applications
(2024 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK 2024) 2024)
High Field Effect Mobility in Normally-Off O2 plasma-treated GaN-based MIS-HEMTs with relatively thick AlGaN barrier layer
(11th Asia-Pacific Workshop on Widegap Semiconductor (APWS 2024) 2024)
High Performance Normally-off GaN-based HEMTs achieved with Recessed and Regrown Channel Structures
(11th Asia-Pacific Workshop on Widegap Semiconductor (APWS 2024) 2024)

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Education (4)：

2006 - 2009 Nagaoka University of Technology Electrical Engineering PhD in Information Science and Control Engineering
2004 - 2006 Nagaoka University of Technology Electrical Engineering Masters in Electrical, Electronics and Information Engineering
1996 - 1998 Mapua Institute of Technology EE-ECE-CoE Masters in Engineering Major in Electronics
1991 - 1995 Mapua Institute of Technology EE-ECE-CoE BS in Electronics and Communications Engineering

Professional career (1)：

PhD in Information Science and Control Engineering (Nagaoka University of Technology)

Work history (4)：

2019/04 - 現在 University of Fukui Graduate School of Engineering Associate Professor
2014/11 - 2019/03 University of Fukui Tenure-Track Program for Innovative Research Senior Assistant Professor
2010/04 - 2014/10 Hokkaido University Research Center for Integrated Quantum Electronics Post-doctoral Fellow
2009/11 - 2010/03 Nagaoka University of Technology Department of Electrical Engineering Post-doctoral Fellow

Committee career (18)：

2023 - 現在 Japanese Society of Applied Physics JJAP/APEX Editor
2023 - 現在 SSDM (International Conference on Solid State Devices and Materials) Committee Vice-chair (Area4: Power/High-speed Devices and Materials)
2022 - 現在 SSDM (International Conference on Solid State Devices and Materials) Committee member (Area4: Power/High-speed Devices and Materials)
2020/04 - 現在 IEEE Electron Devices Society Kansai Chapter Academia Committee Vice Chair
2020 - 現在 The 2021 International Meeting for Future of Electron Devices, Kansai Program Committee Chair

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Awards (24)：

2024/10 - Asia-Pacific Workshop on Widegap Semiconductors (APWS 2024) Best Poster Awards High Field Effect Mobility in Normally-Off O2 plasma-treated GaN-based MIS-HEMTs with relatively thick AlGaN barrier layer
2023/11 - 14th international Conference on Nitride Semiconductors (ICNS 14) Outstanding Poster Award Effect of ultra-thin AlGaN regrown layer on the electrical properties of ZrO2/AlGaN/GaN structures
2023/09 - Institute of Physics (IOP) Trusted Reviewer Status Award IOP Trusted Reviewer Status Award
2023/02 - University of Fukui Teacher of the Year 2022
2022/04 - Institute of Physics (IOP) Applied Physics Express Outstanding Reviewer Award

2021/12 - American Institute of Physics Most Read Tutorials and Methods from 2021, Journal of Applied Physics Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

2021/12 - IEEE Included in the 2021 IEEE Electron Device Letters "Golden List of Reviewers"

2020/11 - IEEE EDS Kansai Chapter The 2020 International Meeting for Future of Electron Devices Kansai (IMFEDK 2020) Improved interface of high-K ZrO2 and AlGaN via ex-situ MOVPE regrowth

2020/02 - University of Fukui Teacher of the Year 2019

2019/11 - IEEE EDS Kansai Chapter The 2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2019) Student Paper Award Study of Luminescence and Leakage Current of AlGaN/GaN HEMTs biased near off-state breakdown

2019/11 - IEEE EDS Kansai Chapter The 2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2019) Best Paper Award Impact of SiN capping during Ohmic Annealing on Performance of GaN-based HEMTs

2018/12 - IEEE Electron Device Letters Journal Included in the IEEE Electronics Device Letters Golden List of Reviewers for 2018 https://eds.ieee.org/images/files/Publications/EDL_Editor_Pictures/edlgoldenlist.pdf

2018/11 - International Workshop on Nitride Semiconductors Threshold voltage hysteresis in GaN-based vertical Trench MOSFETs Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs

2018/06 - 2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018) Student Paper Award Improved Current Collapse in AlGaN/GaN MOS-HEMTs with dual Field-Plates

2017/12 - IEEE Electronics Device Letters Journal Included in the IEEE Electronics Device Letters Golden List of Reviewers for 2017 http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=8103431

2017/06 - The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Best Paper Award Enhancement-Mode AlGaN/GaN MOS-HEMTs with Recessed-Gate Structures Exhibiting High Threshold Voltage

2017/06 - 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure

2016/09 - Japan Society of Applied Physics 2016 Japan Society of Applied Physics Outstanding Paper Award Characterization of electronic states at insulator/(Al)GaN interfaces for improved Insulated gate and surface passivation structures of GaN-based transistors

2016/06 - 2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) Student Paper Award Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns

2015/06 - 2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) Student Paper Award Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure

2013/12 - Japan Society of Applied Physics Hokkaido Chapter Incentive Award Investigation of AlGaN/GaN HEMT Off-state Stress Current Collapse

2008/08 - Japan Society of Applied Physics Hokuriku-Shin Etsu Chapter Incentive Award Growth and Properties of Mn-doped ZnSnAs2 epitaxial films

2008/01 - Institute of Electrical Engineers of Japan(IEEJ) Niigata Chapter Excellent Research Award Interpretation of the Temperature Dependence of the Transport Properties of ZnSnAs2 epitaxial films grown by MBE

2006/01 - Institute of Electrical Engineers of Japan(IEEJ) Niigata Chapter Special Award Effect of Zn Incorporation on the properties of GaMnAs diluted magnetic semiconductor

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Association Membership(s) (1)：

THE JAPAN SOCIETY OF APPLIED PHYSICS

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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