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J-GLOBAL ID：201601012725261014 Update date: Jan. 25, 2025

Niwa Masaaki

ニワマサアキ | Niwa Masaaki

Affiliation and department：
Job title： Senior Fellow
Homepage URL (1)： http://www.dlab.t.u-tokyo.ac.jp

Research field (2)： Electronic devices and equipment , Thin-film surfaces and interfaces

Research keywords (8)： Interface Roughness , 3D System Integration , Hybrid Direct bonding , Physical analysis (High-Resolution TEM, UHV-Scanning Tunneling Microscope, Synchrotron Radiation) , Reliability physics , Advanced CMOS , Gate dielectric , Surface/Interface of electron devices

Research theme for competitive and other funds (7)：

2024 - 2028 Unlocking the Future Potential of Silicon Carbide in Power Electronics
2018 - 2021 Study of ion transport mechanism in ultra-thin electrolyte membrane for low temperature operation of solid oxide fuel cell
2013 - 2016 Fundamental study of high-performance, low-power transistor by hetero interface formation
2012 - 2013 連携大学院構築用教育研究設備「パワーMOSFET作製用実験設備」
2010 - 2011 人材育成プログラム(オナーズプログラム)

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Papers (123)：

Ninomiya, Takeki, Takagi, Takeshi, Mori, Masakazu, Niwa, Masaaki, Kuroda, Tadahiro. Introduction of thick AlN coating on Si for 3D-IC thermal management. Jpn. J. Appl. Phys., S1104187.R1, 2024. 2025
Kai Takeuchi, Takeki Ninomiya, Michitaka Kubota, Masaya Kawano, Takeshi Takagi, Niwa Masaaki, Tadahiro Kuroda, Tadatomo Suga. Hydrophilic Bonding of SiO2/SiO2 and Cu/Cu using Sequential Plasma Activation. ECS Transactions. 2023. 112. 3. 95
Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, et al. Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under Field-Assistance-Free Condition. IEEE Journal of Solid-State Circuits. 2021. 56. 4. 1116-1128
Sadahiko Miura, Koichi Nishioka, Hiroshi Naganuma, Nguyen T. V. A., Hiroaki Honjo, Shoji Ikeda, Toshinari Watanabe, Hirofumi Inoue, Masaaki Niwa, Takaho Tanigawa, et al. Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 1011. IEEE Transactions on Electron Devices. 2020. 67. 12. 1-6
S. Miura, K. Nishioka, H. Naganuma, T. V.A. Nguyen, H. Honjo, S. Ikeda, T. Watanabe, H. Inoue, M. Niwa, T. Tanigawa, et al. Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance 10-11. Digest of Technical Papers - Symposium on VLSI Technology. 2020. 2020-

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MISC (3)：

H. Sato, H. Honjo, T. Watanabe, M. Niwa, H. Koike, S. Miura, T. Saito, H. Inoue, T. Nasuno, T. Tanigawa, et al. A demonstration of high-performance STT-MRAM by development of unit process and integration process. ICD. 2019
小池洋紀, 三浦貞彦, 本庄弘明, 渡辺俊成, 佐藤英夫, 佐藤創志, 那須野孝, 野口靖夫, 安平光雄, 谷川高穂, et al. 1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator. 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2016. 116. 3. 51-56
Y Harada, K Eriguchi, M Niwa, T Watanabe, Ohdomari, I. Impacts of strained SiO2 on TDDB lifetime projection. 2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS. 2000. 216-217

Patents (38)：

SPINTRONICS ELEMENT
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
SPINTRONICS ELEMENT
電子デバイスの評価方法および評価装置
高誘電率ゲート絶縁膜を備えた電界効果トランジスタを有する半導体装置及びその製造方法

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Books (13)：

Hf-Based High-k Gate Dielectric Processing
『High Permittivity Gate Dielectric Materials, Springer Series in Advanced Microelectronics Vol.43』 Edited by Samares Kar (Springer-Verlag Berlin Heidelberg) 2013
Introduction to the Special Issue: High-k Reliability-Status 2009
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY Vol.9, No.2, PP.145-146, JUN 2009 2009
カーボンナノチューブ(エメージングナノロジックデバイス技術)
ナノエレクトロニクス技術調査研究報告書I, pp.30-39 (社)電子情報技術産業協会電子材料・デバイス技術専門委員会 2008
PVD High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-state Drive Current
『Defects in High-k Gate Dielectric Stacks - Nano-Electronic Semiconductor Devices/ NATO Science Series, Series II: Mathematics, Physics and Chemistry, Vol. 216』 Edited by Evgeni Gusev (Springer) 2006
高誘電率ゲート絶縁膜開発の現状と課題
応用物理, 第72巻, 第9号, pp.1143-1150, 2003

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Lectures and oral presentations (137)：

Investigation of Low Temperature Cu/Cu Wafer Bonding for Hybrid Bonding Applications
(2024 8th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2024, Nara, Japan 2024)
Introduction of thick AlN coating on Si for 3D-IC thermal management
(The 56th International Conference on Solid State Devices and Materials (SSDM 2024) 2024)
High Thermal Conductivity AlN Films for Advanced 3D Chiplets
(IEEE VLSI Symposium on Technology and Circuits (VLSI 2024) 2024)
Hydrophilic Bonding of SiO2/SiO2 and Cu/Cu using Sequential Plasma Activation
(244th ECS Meeting, The Electrochemical Society 2023)
Challenge of 3D Stacking technology for Advanced system integration
(2023 MRS Spring meeting, Symposium EL19: Advanced Materials in Scalable Miniaturized Technologies for Future Electronics 2023)

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Professional career (1)：

Doctor of Applied Physics (Osaka University)

Work history (8)：

2024/04 - 現在 RIKEN (Institute of Physical and Chemical Research) Transformative Research Innovation Platform Visiting Scholar
2023/06 - 現在 imec (Interuniversity Microelectronics Centre) imec-Japan Technical Advisor
2021/04 - 現在 Research Association for Advanced Systems (RaaS) Technology area Senior Fellow
2020/04 - 現在 The University of Tokyo Advanced Research Division of Systems Design Lab (d.lab), Graduate school of Engineering Senior Fellow
2013/02 - 2020/03 Tohoku University R&D divisdion at Center for Innovative Integrated Electronic Systems Research and Development Division Professor

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Committee career (42)：

2022/06 - 現在 Semi Japan Advanced Packaging and Chiplet Summit (APCS) commiittee
2016/04 - 現在応用物理学会論文賞委員会 -JSAP 委員
2001/04 - 現在 IEEE/JSAP Symposium on VLSI Technology Symposium Chair,Co-chair, Program committee, Executive committee
1996/02 - 現在 Electronic Device Interface Technology Steering committee, Program committee
1996/02 - 現在電子デバイス界面テクノロジー研究会(旧ゲートスタック研究会) 運営委員、プログラム委員

1982/04 - 現在応用物理学会薄膜分科会, シリコンテクノロジ分科会委員

2008/01 - 2023 Materials Research Society Symposium Symposium organizer

2021 - 2022 国立研究開発法人新エネルギー・産業技術総合開発機構(NEDO) ポスト5G情報通信システム基盤強化研究開発事業 -オープンイノベーション拠点に係る動向調査成果報告書委員長

2021 - 2022 国立研究開発法人新エネルギー・産業技術総合開発機構(NEDO) ポスト5G情報通信システム基盤強化研究開発事業 -先端パッケージングに係る技術動向調査委員会委員長

2019 - 2020 京都賞委員

2018 - 2019 NEF (Next Einstein Forum: Sponsored by African Institute of Mathematical Sciences (AIMS)) Committee member

2015 - 2018 IEEE Fellow Grade Evaluation committee Vice chair

2014/04 - 2018 IEEE EDS Japan joint Chapter Chapter Chair, Vice Chapter Chair

2013/01 - 2018 IEEE Cledo Brunettii Award Committee Chair, Committee memmber

2017/01 - 2017/12 European Solid-State Device Research Conference (ESSDERC) Japan Publicity chair Japan Publicity Chair

2017/01 - 2017/12 Research Council of university of Leuven (KU Leuven) External referee of positions for senior research professors (senior BOFZAP) of university of Leuven (KU Leuven).

2017/01 - 2017/12 ルーヴェンカトリック大学上級研究教授(上級BOFZAP) 研究委員会外部評価委員外部評価委員

2016/01 - 2017/12 IEEE Electron Devices Technology and Manufacturing,EDTM Executive Committee Executive Committee, J-EDS Special Issue Chair

2015/01 - 2015/12 Research Foundation Flanders, Belgium (FWO) External evaluation committee member

2011/04 - 2013/12 半導体ロードマップ委員会(STRJ) プロセスインテグレーション、デバイス、構造分科会特別委員

2010 - 2012 Journal of Applied Nanoscience(ANSC), Springer Editor

2011/01 - 2011/12 International Nanotechnology Conference, INC Progrm committee member

2008/04 - 2011/12 JSAP/IEEE International Workshop on Dielectric Thin Film for Future Devices, IWDTF General Chair, Steering committee

2003/01 - 2011/12 IEEE SISC (Semiconductor Interface Specialist Conf.) Program committee

2005/01 - 2010/12 IEEE Biennial Conf. on Insulating Films on Semiconductors, INFOS Program committee

2007/04 - 2009/03 電子材料・デバイス技術専門委員会 -ナノエレクトロニクス技術分科会分科会委員

2008/01 - 2008/12 IEEE Transactions on Device and Materials Reliability Guest editor Guest editor

2007 - 2008 IEEE Int'l Symp. on Advanced Gate Stack Technology (ISAGS) Program committee member

2007/01 - 2007/12 Research Foundation Flanders, Belgium (FWO) External evaluation committee member

1998 - 2007 International Technology Roadmap for Semiconductor (ITRS) Front-end -process (FEP) sub-committee/Repserentative from Japan

2003/04 - 2004/03 JSAP/IEEE International Conference on Solid State Devices and Materials,SSDM Program committee

2003 - 2004 IEEE International Reliability Physics Symp. (IRPS) Device Dielectric Chair (High-k, Gate Dielectrics)

2002 - 2003 IEEE International Reliability Physics Symp. (IRPS) Device Dielectric Vice Chair (Device Dielectrics I,II)

2001 - 2002 IEEE International Electron Devices Meeting (IEDM) Asian arrangement Chair, Executive committee

1998/04 - 2000/03 (独)日本学術振興会委員「高純度材料における表面安定化と初期酸化」専門委員会委員

1999 - 2000 IEEE International Electron Devices Meeting (IEDM) CMOS & Interconnect Reliability sub-committee member

1997/04 - 1999/03 (独)日本学術振興会委員結晶加工と評価技術第145委員会委員

1997/04 - 1998/03 (独)日本学術振興会委員ナノプローブテクノロジ第167委員会委員

1995/04 - 1998/03 (財)新機能素子研究開発協会量子化機能素子研究委員会総合調査研究委員

1992/04 - 1995/03 (社)日本電子工業振興協会極限構造集積システム専門委員会委員

1991/04 - 1993/03 (独)日本学術振興会委員半導体界面制御技術第154委員会委員

1993 - Int’l Symp. on Control of Semiconductor Interfaces (ISCSI) Program committee member

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Awards (13)：

2015/09 - 22nd Int'l Symposium on the Physical and Failure Analysis (IPFA) of Integrated Circuits (IPFA), Hshinchu, Republic of China Certificate of appreciation of invited talk Study of Reliability Physics on High-k/Metal Gate and Power Devices
2014/02 - The Japan Society of Applied Physics (JSAP) Fellow 2) Fellow of JSAP (The Japan Society of Applied Physics) in 2014, “Materials Research on Advanced CMOS Gate Stacks and Their Practical Implementation”
2013/10 - The Electrochemical Society The Best Paper Award Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories
2013/09 - Electron Devices Society (EDS)/ IEEE (Institute of Electrical and Electronics Engineers) Fellow CMOS technology using high dielectric constant materials and metal gate
2012/10 - Korean Semiconductor Physics Society Outstanding Presentation Award Theoretical Investigation of Al2O3 O Vacancy Barrier Layer for High Quality ReRAM

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Association Membership(s) (3)：

The Materials Research Society MRS/ Symposium organizer , The Japan Society of Applied Physics JSAP/ Fellow , Institute of Electrical and Electronics Engineers IEEE/ Fellow

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