Rchr
J-GLOBAL ID:201701012292442377
Update date: Sep. 30, 2022
Okamoto Hiroshi
オカモト ヒロシ | Okamoto Hiroshi
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Other affiliations (2):
自然科学系 機能創成科学領域
教授
理工学部
電子情報工学科 教授
Homepage URL (1):
http://www.eit.hirosaki-u.ac.jp/~okamoto/home/
Research field (2):
Crystal engineering
, Electric/electronic material engineering
Research keywords (9):
DLTS
, surfactant
, bismuth
, quantum dot
, MIS
, GeSn
, Ge
, germanium
, semiconductor nano structure
Papers (84):
Keiichi Nakata, Hideki Nakazawa, Hiroshi Okamoto, Yasuyuki Kobayashi. Influence of the terrace width of pentacene underlayers on the crystallinity of C60 overlayers. Thin Solid Films. 2019. 692. 137638_1-137638_5
Hiroshi Okamoto, Kensuke Takita, Kazuto Tsushima, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh. Low-temperature formation of GeSn nanodots by Sn mediation. Jpn. J. Appl. Phys. 2019. 58. SDDG09_1-SDDG09_8
Kazuto Tsushima, Kensuke Takita, Hideki Nakazawa, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh, Hiroshi Okamoto. Study on the formation mechanism of bismuth-mediated Ge nanodots fabricated by vacuum evaporation. Jpn. J. Appl. Phys. 2019. 58. SDDG10_1-SDDG10_5
Hiroshi Okamoto. Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth. Journal of Advances in Nanomaterials. 2016. 1. 82-94
Yukio Fukuda, Daichi Yamada, Tomoya Yokohira, Kosei Yanachi, Chiaya Yamamoto, Byeonghak Yoo, Junji, Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, et al. Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition. Journal of Vacuum Science & Technology A. 2016. 34. 2. 02D101_1-02D101_4
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Education (1):
1981 - 1983 千葉大学大学院 工学研究科
Professional career (1):
博士(工学) (千葉大学)
Work history (2):
2008/04 - 現在 Hirosaki University Graduate School of Science and Technology Professor
1983/04 - 2008/03 NTT(旧電電公社含む) 電気通信研究所(NEL社への出向を含む)
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