Rchr
J-GLOBAL ID:201801011917939144   Update date: May. 17, 2024

Oda Masato

オダ マサト | Oda Masato
Homepage URL  (1): http://www.wakayama-u.ac.jp/~moda/
Research keywords  (1): First-principles calculation
Research theme for competitive and other funds  (6):
  • 2022 - 2024 Fabrication of Thermoelectric Conversion Materials Using Soil Clay Minerals
  • 2020 - 2023 Large-scale electronic structure calculation of cerasome surface model for DDS application and its opening method
  • 2019 - 2021 Deformation and migration theory of singularities via electron-phonon interaction
  • 2019 - 2021 GaN 内 Mg のクラスタリング(偏析)の計算科学的研究
  • 2017 - 2019 Theoretical study of energy conversion around structural singularities
Show all
Papers (26):
  • Jota Nakamura, Masato Oda, Yoshihiro Kangawa. Adiabatic Potential for Conformational Change of VGa-VN Complex Defects in GaN. physica status solidi (b). 2024
  • 小田将人, 古木凌太, 篠塚雄三. (ZnO)1-x(InN)x混晶半導体の初期成長過程と電子状態. 日本結晶成長学会誌. 2023. 50. 1. 50-1-06_1-50-1-06_11
  • Masato Oda, Noritake Koike. Electronic Structures of Iodine-Doped Lithium Phthalocyanine Crystals. physica status solidi (b). 2023. 260. 5
  • Nao Kadowaki, Masato Oda, Jun Nara. Theoretical study on adsorption state of chemisorbed oxygen molecule on partially oxidized Si(001) surface. Japanese Journal of Applied Physics. 2021. 60. 12. 125501-125501
  • Nobuyuki Ohtsuka, Masato Oda, Takashi Eshita, Ichiro Tanaka, Chihiro Itoh. Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation. 2020. 59. SGGK16
more...
MISC (15):
  • Novel approach for Growth Mechanism of Atomic Layer Epitaxy of GaAs and AlAs. 2019 International Conference on Solid State Devices and Materials. 2019. F-5-03
  • 境新, 小田将人, 伊東千尋, 篠塚雄三. フェロセン内包CNTの電子状態計算. 日本物理学会講演概要集(CD-ROM). 2018. 73. 1
  • Mizukoshi T., Oda M., Shinozuka Y. 27pAP-1 First-Principles Calculation for Initial Oxidation Process on Ge(100) Surfaces. Meeting abstracts of the Physical Society of Japan. 2014. 69. 1. 870-870
  • Minamisako D., Oda M., Shinozuka Y. 26pPSB-43 Adsorption state analysis of DAT molecule on Si(111)7×7 surfaces using ab initio calculation. Meeting abstracts of the Physical Society of Japan. 2012. 67. 1. 966-966
  • Oda M., Nishimura T., Sasahara A., Murata H., Arai T., Tomitori M. 24pCC-3 Bias voltage dependence of STM images of DAT molecule adsorbed on Si(001) surfaces. Meeting Abstracts of the Physical Society of Japan. 2012. 67. 0. 936-936
more...
Books (1):
  • 力学のサボり方
    学術図書出版社 2022 ISBN:9784780609981
Lectures and oral presentations  (75):
  • 窒化ガリウム中におけるVGa-VN周りの欠陥反応解析
    (第71回応用物理学会春季学術講演会 2024)
  • PHASE/0を用いたセシウム吸着風化黒雲母の溶融塩反応機構解明
    (NIMS ナノシミュレーション ワークショップ 2023 2023)
  • Thermal Interaction between Exitons in III-Nitride Semiconductors
    (The 14th International Conference on Nitride Semiconductors 2023)
  • Adiabatic potential for conformational change of VGa-VN complex defects in GaN
    (14th International Conference on Nitride Semiconductors 2023)
  • 第一原理計算による窒化アルミニウム上での窒化ニオブの結晶成長初期段階の解明
    (第84回応用物理学会秋季学術講演会 2023)
more...
Education (2):
  • 2001 - 2006 Chiba University Graduate School of Science and Technology
  • 1997 - 2001 Chiba University Faculty of Science Department of Physics
Work history (9):
  • 2023/04 - 現在 Ainogakuin College
  • 2023/04 - 現在 Wakayama University Faculty of Systems Engineering
  • 2017/04 - 現在 Tokyo Healthcare University
  • 2018/04 - 2022/03 Wakayama University Faculty of Systems Engineering
  • 2019/04 - 2019/09 Nagoya Institute of Technology
Show all
Awards (1):
  • 2018 - 応用物理学会2018年春季学術講演会PosterAward (ZnO)x(InN)1-x混晶半導体の電子状態の理論
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page