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J-GLOBAL ID：201801016759968940   Update date: May. 29, 2024

Yamane Keisuke

Yamane Keisuke
Affiliation and department：
Toyohashi University of Technology

About Toyohashi University of Technology


Research field  (1)： Electric/electronic material engineering
Research keywords  (4)： GaN ,  GaAs ,  GaP ,  Crystal Growth
Research theme for competitive and other funds  (17)：
  • 2019 - 2022 高効率フレキシブル太陽電池に向けたGaAsPN混晶の結晶成長
  • 2020 - 2021 Fabrication of GaAsPN sub-cell for III-V/Si tandem solar cell
  • 2020 - 2021 Interpretation of electrical conductivity of GaAsPN alloys for III-V compound semiconductor solar cell
  • 2020 - 2021 Fabrication of pn-junction with enhancing spatial-separation of photo-carrier for efficient solar cell
  • 2018 - 2020 完全無欠陥III-V/Siヘテロ成長技術の創生にむけたGaP系半導体材料の成長様式の解明と太陽電池応用
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Papers (69)：
  • E. M. Pavelescu, D. Ticoş, O. Ligor, C. Romaniţan, A. Matei, F. Comănescu, V. Ţucureanu, S. I. Spânulescu, C. Ticoş, T. Ohshima, et al. Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing. Optical Materials. 2024. 149. 115075-1-115075-5
  • Joshua Chombo, Mohd Faiz Bin Amin, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Mingjun Jiang, Donghwan Ahn, Kazumi Wada, Yasuhiko Ishikawa. Anti-relaxation of tensile lattice strain in Si-embedded Ge strip structure for photonic device applications. Japanese Journal of Applied Physics. 2024. 63. 3. 03SP32-1-03SP32-7
  • Mohd Faiz Bin Amin, Jose A. Piedra-Lorenzana, Keisuke Yamane, Takeshi Hizawa, Tetsuya Nakai, Yasuhiko Ishikawa. High-quality Ge epitaxial film based on dislocation trapping mechanism in patterned Si substrate. Japanese Journal of Applied Physics. 2023. 63. 02SP78-1-02SP78-5
  • Keisuke Yamane, Yuito Maki, Shun One, Akihiro Wakahara, Emil Mihai Pavelescu, Takeshi Ohshima, Tetsuya Nakamura, Mitsuru Imaizumi. Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach. Journal of Applied Physics. 2022. 132. 6
  • Keisuke Yamane, Ryo Futamura, Shigeto Genjo, Daiki Hamamoto, Yuito Maki, Emil Mihai Pavelescu, Takeshi Ohshima, Taishi Sumita, Mitsuru Imaizumi, Akihiro Wakahara. Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. 2
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MISC (23)：
  • PIEDRA-LORENZANA Jose A., KANEKO Shohei, FUKUSHIMA Takaaki, YAMANE Keisuke, FUJIKATA Junichi, ISHIKAWA Yasuhiko. AlN Stressor Layer for Ge-on-Si Photonic Devices. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
  • PIEDRA-LORENZANA Jose A., KANEKO Shohei, FUKUSHIMA Takaaki, YAMANE Keisuke, FUJIKATA Junichi, ISHIKAWA Yasuhiko. AlN film by reactive sputtering as a stressor for Ge photonic devices on Si. 電子情報通信学会技術研究報告(Web). 2023. 123. 41(ED2023 1-9)
  • 古家聖輝, 葛谷樹矢, PIEDRA-LORENZANA Jose A., 飛沢健, 山根啓輔, 石川靖彦. Effect of Ge Epitaxial Buffer Layer on Solid Phase Growth of Ge on Si. 電子情報通信学会技術研究報告(Web). 2023. 123. 41(ED2023 1-9)
  • 前田匠海, 加藤滉大, PIEDRA-LORENZANA Jose A., 山根啓輔, 飛沢健, 中井哲弥, 石川靖彦. Effect of trench width on Ge epitaxial growth on Si. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
  • 古家聖輝, 葛谷樹矢, PIEDRA-LORENZANA Jose A., 飛沢健, 山根啓輔, 藤原弘康, 石川靖彦. Effect of Ge Epitaxial Interlayer on Solid-Phase Growth of Ge on Si. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
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Patents (9)：
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Lectures and oral presentations  (269)：
  • アンチモン添加によるリン系III-V希薄窒化物結晶の高 品質化に関する理論的解析
    (第71 回応用物理学会春季学術講演会 2024)
  • III-V希薄窒化物混晶の成長過程におけるアンチモンサーファクタント効果
    (第71 回応用物理学会春季学術講演会 2024)
  • 発光デバイス応用に向けたHfGe混晶の理論的検討
    (第71 回応用物理学会春季学術講演会 2024)
  • Franz-Keldysh Effect in Lateral pin Photodetectors of Ge Strip on Si at C-, L- and U-Band Wavelengths
    (Photonic Device Workshop 2023 2023)
  • Formation of TEOS-SiOx film by PECVD for Si photonics applications
    (Photonic Device Workshop 2023 2023)
ｍore...
Education (4)：
  • 2008 - 2011 Toyohashi University of Technology
  • 2006 - 2008 Toyohashi University of Technology
  • 2004 - 2006 Toyohashi University of Technology Faculty of Engineering
  • 1999 - 2004 Tsuyama National College of Technology
Work history (3)：
  • 2022/09 - 現在 Toyohashi University of Technology Graduate School of Engineering Department of Electrical and Electronic Information Engineering
  • 2014/04 - 2022/08 Toyohashi University of Technology Graduate School of Engineering Department of Electrical and Electronic Information Engineering
  • 2011/04 - 2014/03 Yamaguchi University of Science and Engineering, Graduate School
Committee career (3)：
  • 2023/04 - 2025/02 電子材料シンポジウム実行委員会 会場委員
  • 2014/08 - 2015/11 ISGN-6組織委員会 現地実行委員
  • 2012/06 - 2012/08 応用物理学会中国四国支部 2012年度支部学術講演会 会計委員
Awards (4)：
  • 2022/12 - 高専-TUT太陽電池合同シンポジウム実行委員会 優秀口頭発表賞 希薄窒化物混晶中に導入した空孔による点欠陥低減に関する理論的解析
  • 2016/11 - 応用物理学会 結晶工学分科会発表奨励賞 モノリシックIII-V/Si多接合太陽電池に向けたGaAsPN混晶の結晶成長
  • 2013/05 - 日本結晶成長学会 ナノ構造・エピタキシャル成長分科会第5回窒化物半導体結晶成長講演会 研究奨励賞 流量変調法を用いたハイドライド気相成長によるGaNの平坦性およびGa原料利用効率の改善
  • 2012/03 - 応用物理学会 春季第59回応用物理学会関係連合学術講演会講演奨励賞受賞 ハイドライド気相成長による非極性面GaNの低転位化
Association Membership(s) (2)：
THE JAPAN SOCIETY OF APPLIED PHYSICS ,  JAPANESE ASSOCIATION FOR CRYSTAL GROWTH
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