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J-GLOBAL ID：201801018641993071   Update date: Mar. 25, 2025

Nitta Shugo

ニッタ シュウゴ | Nitta Shugo
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Affiliation and department：
Nagoya University, Tokai National Higher Education and Research System Institute of Materials and Systems for Sustainability

About Nagoya University, Tokai National Higher Education and Research System Institute of Materials and Systems for Sustainability


Job title： Designated associate professor
Research field  (1)： Crystal engineering
Research keywords  (1)： Nitride semiconductors
Research theme for competitive and other funds  (2)：
  • 2024 - 2028 半導体化学気相成長の科学
  • 2022 - 2024 High speed growth of pn junction by HVPE for fabrication of SJ diod
Papers (91)：
  • Kazuki Ohnishi, Kansuke Hamasaki, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy. Journal of Crystal Growth. 2024
  • Shin Ito, Shin ichiro Sato, Michał S. Boćkowski, Manato Deki, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Ken ichi Yoshida, Hideaki Minagawa, et al. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2024. 547
  • Kansuke Hamasaki, Kazuki Ohnishi, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy. Journal of Crystal Growth. 2024. 628. 127529-127529
  • Hirotaka Watanabe, Shugo Nitta, Yuto Ando, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate. Journal of Crystal Growth. 2024. 628. 127552-127552
  • T. Kimura, H. Shimazu, K. Kataoka, K. Itoh, T. Narita, A. Uedono, Y. Tokuda, D. Tanaka, S. Nitta, H. Amano, et al. Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy. Applied Physics Letters. 2024. 124. 5
ｍore...
MISC (27)：
  • Nagamatsu, K., Ando, Y., Ye, Z., Barry, O.L., Tanaka, A., Deki, M., Nitta, S., Honda, Y., Pristovsek, M., Amano, H. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 2018. 57. 10
  • Tanaka, A., Ando, Y., Nagamatsu, K., Deki, M., Cheong, H., Ousmane, B., Kushimoto, M., Nitta, S., Honda, Y., Amano, H. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates. Physica Status Solidi (A) Applications and Materials Science. 2018. 215. 9
  • Yang, X., Nitta, S., Pristovsek, M., Liu, Y., Nagamatsu, K., Kushimoto, M., Honda, Y., Amano, H. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy. Applied Physics Express. 2018. 11. 5
  • Usami, S., Ando, Y., Tanaka, A., Nagamatsu, K., Deki, M., Kushimoto, M., Nitta, S., Honda, Y., Amano, H., Sugawara, Y., et al. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate. Applied Physics Letters. 2018. 112. 18
  • Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate. 2017. 117. 332. 19-22
ｍore...
Patents (20)：
ｍore...
Education (3)：
  • 2000 - 2003 Meijo University Graduate School, Division of Science and Engineering
  • 1998 - 2000 Meijo University Graduate School, Division of Science and Engineering
  • 1994 - 1998 Meijo University Faculty of Science and Engineering
Professional career (1)：
  • Ph.D. (Meijo University)
Work history (6)：
  • 2025/02 - 現在 Mie University Mie University. Innovation Center For Semiconductor And Digital Future Professor
  • 2015/10 - 2025/01 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Designated associate professor
  • 2008/01/16 - 2015/09/30 TOYODA GOSEI Co., Ltd.
  • 2007/04 - 2008/01 エルシード株式会社
  • 2005/12 - 2007/03 Meijo University
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Association Membership(s) (2)：
the Japanese Association for Crystal Growth ,  The Japan Society of Applied Physics
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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