Rchr
J-GLOBAL ID：201901004592088925
Update date: Dec. 19, 2023
Abe Tomoki
アベ トモキ | Abe Tomoki
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Affiliation and department：
鳥取大学 工学部
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Detailed information
Job title：
准教授
Homepage URL (1)：
https://abe.eecs.tottori-u.ac.jp/
Research field (2)：
Electronic devices and equipment
, Crystal engineering
Research keywords (4)：
発光ダイオード
, 光検出器
, 分子線エピタキシー
, 半導体
Research theme for competitive and other funds (22)：
2022 - 2023 ZnSe系有機-無機ハイブリッド型紫外APDアレイの開発
2019 - 2022 ZnSe系有機-無機ハイブリッド型紫外高感度集積APDの開発
2020 - 2021 ZnSe系有機-無機ハイブリッド型紫外集積APDの開発
2018 - 2021 ZnSe系有機-無機ハイブリッド型紫外集積APDの実用開発
2018 - 2021 Control of band-edge energies and conductivity in wide bandgap sulfide semiconductors
2019 - 2020 ZnSe系有機-無機ハイブリッド型紫外高感度集積APDの開発
2015 - 2018 Development of organic-inorganic hybrid UV-APD array
2017 - 2018 ZnSe系有機-無機ハイブリッド型紫外高感度集積APDの開発
2015 - 2018 紫外線用有機-無機ハイブリッド構造集積化APDの実現
2014 - 2017 p-type conductivity control in ZnMgSTe alloy semiconductors by adjusting the valence-band-edge energy
2015 - 2016 ZnSe系有機-無機ハイブリッド型紫外光波帯集積APD の開発
2012 - 2014 Development of Primary-Secondary Air-Battery using Activated-Carbon made from Saw-dust under high temperature
2011 - 2013 Development of Stark modulator using ZnO/ZnMgO quantum wells
2009 - 2010 有機-無機ハイブリッド型紫外高感度光検出器の開発
2009 - 2010 有機-無機ハイブリッド型紫外高感度光検出器の開発
2008 - 2010 Development of Ultraviolet APD Device by Widegap Semiconductors
2008 - 2009 等電子不純物束縛励起子による新機構青色レーザダイオードの開発
2006 - 2008 Development of II-VI widegap semiconductor optical devices on p-GaAs substrates using resonant tunnel superlattice.
2004 - 2006 Study of degradation mechanism and its control on II-VI, III-V wide bandgap light emitting device
2002 - 2004 ワイドバンドギャップ半導体光デバイス用超格子共鳴トンネル電極の実用開発
2000 - 2001 青-紫外光域・雪崩増幅型半導体光検出素子(APD)の基礎研究
1998 - 1999 Study on Degradation Mechanism of II-VI based blue-Green Laser Diodes
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Papers (66)：
阿部友紀. ユビキタスデバイス開発を加速する新しいエレクトロニクス材料 1.ZnSe系紫外APDの開発から有機-無機ハイブリッドAPDアレイまで. 材料. 2023. 72. 8. 621-627
Yuki Ichikawa, Keita Tanaka, Kazuki Nakagawa, Yuta Fujii, Kentaro Yoshida, Kaiki Nakamura, Ryuichi Miyazaki, Tomoki Abe, Hirofumi Kasada, Kunio Ichino, et al. High-Gain Ultraviolet Avalanche Photodiodes Using a ZnSe-Based Organic-Inorganic Hybrid Structure. Journal of Electronic Materials. 2020. 49. 8. 4589-4593
Naoki Maekawa, Hirotake Nakayama, Nobuaki Yamane, Koji Irie, Tomoki Abe, Hirofumi Kasada, Kunio Ichino, Kazuaki Akaiwa. p-Type Nonpolar a-ZnO:N Thin Films on r-Sapphire Substrates Grown by Molecular Beam Epitaxy. Journal of Electronic Materials. 2020. 49. 8. 4474-4478
Kazuaki Akaiwa, Katsuya Ota, Takahito Sekiyama, Tomoki Abe, Takashi Shinohe, Kunio Ichino. Electrical Properties of Sn-Doped α-Ga 2 O 3 Films on m-Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition. physica status solidi (a). 2020. 217. 3. 1900632-1900632
原田宜明,笠田洋文,安東孝止,阿部友紀,市野邦男. 白色発光ダイオードの駆動電流パルス幅制御による高出力動作を用いた植物栽培. 材料. 2018. 67. 9. 834-839
ｍore...
MISC (1)：
ASANO Takashi, NODA Susumu, ABE Tomoki, SASAKI Akio. Nearinfrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate. 1995. 1995. 118-120
Education (2)：
1995 - 1997 京都大学大学院 工学研究科 電子物性工学専攻
1991 - 1995 Kyoto University Faculty of Engineering
Professional career (1)：
博士(工学) (京都大学)
Work history (3)：
2008/04 - 現在 Tottori University Graduate School of Engineering
2007/01 - 2008/03 Tottori University Faculty of Engineering
1997/04 - 2006/12 Tottori University Faculty of Engineering
Association Membership(s) (2)：
THE SOCIETY OF MATERIALS SCIENCE, JAPAN
, THE JAPAN SOCIETY OF APPLIED PHYSICS
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