Zhang Xufang

Affiliation and department：

Research field (1)： Thin-film surfaces and interfaces

Research keywords (2)： MOS interface characterization for SiC & Diamond , power semiconductors

Research theme for competitive and other funds (1)：

2020 - 2022 Limiting factor elucidation of channel mobility in inversion-type p-channel diamond MOSFETs

Papers (14)：

Kazuki Kobayashi, Xufang Zhang, Toshiharu Makino, Tsubasa Matsumoto, Takao Inokuma, Satoshi Yamasaki, Christoph E. Nebel, Norio Tokuda. Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth. Applied Surface Science. 2022. 593
Yuta Nakano, Xufang Zhang, Kazuki Kobayashi, Tsubasa Matsumoto, Takao Inokuma, Satoshi Yamasaki, Christoph E. Nebel, Norio Tokuda. Impact of nitrogen doping on homoepitaxial diamond (111) growth. Diamond and Related Materials. 2022. 125
Yue Takamori, Masatsugu Nagai, Taira Tabakoya, Yuto Nakamura, Satoshi Yamasaki, Christoph E. Nebel, Xufang Zhang, Tsubasa Matsumoto, Takao Inokuma, Norio Tokuda. Insight into temperature impact of Ta filaments on high-growth-rate diamond (100) films by hot-filament chemical vapor deposition. Diamond and Related Materials. 2021. 118
Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, et al. Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method. Carbon. 2020. 168. 659-664
Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Mitsuru Sometani, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, Norio Tokuda. Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method. Applied Physics Letters. 2020. 117. 9

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MISC (1)：

Xufang Zhang, Tsubasa Matsumoto, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, Norio Tokuda. Inversion-type p-channel diamond MOSFET issues. Journal of Materials Research. 2021

Lectures and oral presentations (9)：

Analysis of three-level charge pumping characteristics of 4H-SiC MOSFETs considering near-interface traps
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides
(International Conference on Silicon Carbide and Related Materials 2019 2019)

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Education (1)：

Work history (2)：

2019/12 - 現在 Kanazawa University
2018/10 - 2019/11 Faculty of Pure and Applied Sciences, University of Tsukuba Postdoc

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