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J-GLOBAL ID：201901019569133376 Update date: Dec. 29, 2024

Kato Kimihiko

カトウキミヒコ | Kato Kimihiko

Affiliation and department：

Research field (1)： Electronic devices and equipment

Research theme for competitive and other funds (1)：

Papers (97)：

Chutian Wen, Hiroki Takahashi, Sayyid Irsyadul Ibad, Shimpei Nishiyama, Kimihiko Kato, Yongxun LIU, Shigenori Murakami, Takahiro MORI, Raisei Mizokuchi, Jun Yoneda, et al. Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique. Applied Physics Express. 2024
Hidehiro Asai, Shota IIZUKA, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori. Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation. Japanese Journal of Applied Physics. 2023. 62. {SC}
Yoshisuke Ban, Kimihiko Kato, Shota IIZUKA, Shigenori Murakami, Koji Ishibashi, Satoshi Moriyama, Takahiro Mori, Keiji Ono. Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit. Japanese Journal of Applied Physics. 2023. 62. {SC}
Shimpei Nishiyama, Kimihiko Kato, Mizuki Kobayashi, Raisei Mizokuchi, Takahiro Mori, Tetsuo Kodera. The functions of a reservoir offset voltage applied to physically defined p-channel Si quantum dots. Scientific Reports. 2022. 12. 1
Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Takahiro Mori, Thierry Ferrus, Tetsuo Kodera. 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot. Scientific Reports. 2021. 11. 1

MISC (11)：

Lectures and oral presentations (82)：

Development of electron beam lithography technique for fabrication of integrated silicon quantum bits
(34th International Microprocesses and Nanotechnology Conference (MNC 2021) 2021)
Electron Beam Lithography for Future Highly-Integrated Si Quantum Bits
(BEAMeeting E-Beam Workshop 2021)
Bi-layer tunneling FET using group IV/oxide semiconductor hetero-structure
(8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8) 2019)
Importance of Semiconductor MOS Interface Control on Advanced Electron Devices
(2019 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF 2019) 2019)
Group IV/oxide semiconductor bi-layer tunneling FET
(IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S Conference) 2019)

Education (3)：

2010 - 2013 Nagoya University Graduate School of Engineering Crystalline Materials Science
2008 - 2010 Nagoya University Graduate School of Engineering Crystalline Materials Science
2004 - 2008 Nagoya University School of Engineering Physical Science and Engineering

Professional career (1)：

Work history (8)：

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Awards (5)：

2020/02 - 応用物理学会シリコンテクノロジー分科会研究奨励賞 ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties
2019/09 - International Conference on Solid State Devices and Materials Young Researcher Award
2014/09 - 応用物理学会第36回(2014年春季)応用物理学会講演奨励賞
2011/11 - 15th International Conference on Thin Films • Award for Encouragement of Research in Thin Films
2008/12 - 表面科学会中部支部講演奨励賞

Association Membership(s) (2)：

IEEE , 応用物理学会

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