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J-GLOBAL ID：202001006119891692 Update date: Mar. 31, 2025

Kasu Makoto

嘉数誠 | Kasu Makoto

Affiliation and department：
Job title：教授

Research field (3)： Electronic devices and equipment , Thin-film surfaces and interfaces , Crystal engineering

Research keywords (5)：半導体 , ワイドギャップ半導体 , ダイヤモンド , パワーエレクトロニクス , 半導体デバイス

Research theme for competitive and other funds (9)：

2022 - 2025 Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched Substrate
2021 - 2025 Control of nanostructures of directly-bonded Si/diamond interfaces by annealing
2019 - 2022 Fundamental Study on Cubic Diamond Heteroepitaxial Growth on Trigonal Sapphire Substrate
2018 - 2020 Direct bonding of widegap semiconductors and diamond for high-efficiency devices and investigation of bonding interface characteristics
2016 - 2018 Room temperature bonding of diamond to Si for power device application and clarification of bonding mechanism

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Papers (183)：

S. Sdoeung, Y. Otsubo, K. Sasaki, A. Kuramata, M. Kasu. Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography. 2023 Applied Physics Letters 123(12),122101. 2023. 123. 12. 122101
S. Sdoeung, K. Sasaki, K Kawasaki, A. Kuramata, M. Kas. Observation of comet-shaped defect as killer defect in halide vapor phase epitaxial (001) β-Ga2O3 and its impact on Schottky barrier diodes. Jpn. J. Appl. Phys. 2023. 62. 71001
Niloy Chandra Saha, Tomoki Shiratsuchi, Toshiyuki Oishi, M. Kas. AC Stable (100 h) Operation of NO2 p-Type Doped Diamond MOSFETs. IEEE Electron Device Letters. 2023. 44. 1704
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata and Makoto Kasu. Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes. Jpn. J. Appl. Phys. 2023. 62. SF1001
Niloy Chandra Saha , Yuya Irie, Yuhei Seki, Yasushi Hoshino, Jyoji Nakata, Seong-Woo Kim , Toshiyuki Oishi,. 1651-V All-ion-implanted Schottky Barrier Diode on Heteroepitaxial Diamond with 3.6×105 On/off Ratio. IEEE Electron Dev. Lett. 2023. 44. 293

MISC (9)：

嘉数誠. ダイヤモンド半導体. 學士會会報. 2022
嘉数誠. ダイヤモンドパワー半導体デバイスの高出力化成功 5年後実用化に照準合わす. ダイヤモンドパワー半導体デバイスの高出力化成功 5年後実用化に照準合わす. 2021. 972
嘉数誠. ダイヤモンドウェハおよびトランジスタ技術の最近の進展. かがやき. 2021. 33
嘉数誠、桝谷聡士. パワー半導体デバイス応用を目指したダイヤモンド,酸化ガリウムのシンクロトロンX 線トポグラフィー観察. 放射光学会Nov. 2019 Vol.32 No.6、285-291. 2020. 32. 6. 285
嘉数誠. 資源問題と表面科学. 表面科学. 2014. 35. 12

Books (8)：

Lectures and oral presentations (305)：

(001)面方位HVPEエピ厚膜?型酸化ガリウムショットキーバリアダイオードの多結晶欠陥列のエミッション顕微鏡観察
(25p-61A-11、応用物理学会春季学術講演会、2024年3月25日 2024)
ダイヤモンドMOSFETの高電圧(105V) スイッチング動作
(25a-52A-6、応用物理学会春季学術講演会、2024年3月25日 2024)
Diamond High Power and Voltage MOSFETs: Physics, Fabrication, Static and Dynamic Characterization
(16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 17th International Conference on Plasma-Nano Technology & Science / 13th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (ISPlasma2024 / IC-PLANTS2024 / APSPT-13) ISPlasma 2024、名古屋、2024年3月5日 2024)
ダイヤモンドパワー半導体開発の現状
(エレトロニクス実装学会「部品内蔵技術委員会技術調査研究会公開研究会『パワーデバイスと関連技術』」、2024年3月1日 2024)
パワー半導体に向けたダイヤモンドMOSFETの最近の進展
(応用物理学会電子デバイス界面研究会、三島、2024年2月1日 2024)

Education (2)：

- 1990 Kyoto University
- 1985 Kyoto University Faculty of Engineering School of Electrical & Electronic Engineering

Work history (18)：

2019/04 - 現在 Saga University Faculty of Science and Engineering Department of Science and Engineering
2019/04 - 現在 Saga University OTEC Laboratory, Faculty of Science and Engineering
2011/10 - 現在 Saga University Courses of Science and Engineering
2016/05 - 2020/03 National Institute of Advanced Industrial Science and Technology
2015/04 - 2017/03 Japan Aerospace Exploration Agency

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Awards (12)：

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Association Membership(s) (4)：

結晶成長学会 , 電子情報通信学会 , 表面真空学会 , 応用物理学会

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