Kawanago Takamasa

カワナゴタカマサ | Kawanago Takamasa

Affiliation and department：
Job title：助教
Research theme for competitive and other funds (10)：

2023 - 2026 超低電圧動作2次元半導体CMOS集積回路の研究
2020 - 2025 ゲート絶縁膜転写法を用いた2次元層状材料の界面制御とナノ電子デバイス応用
2019 - 2022 インターカレーションを駆使したゲルマニウムナノシートの電子物性制御
2017 - 2021 Two Dimensional Inorganic/Organic Hetero Interface for Normally Off MoS2 FET
2016 - 2021 二次元TMDC相補型MISFETsのLSIプロセスによる性能向上と応用

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Papers (60)：

Shinya Imai, Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Kuniyuki Kakushima, Hitoshi Wakabayashi. Reduction of contact resistance to PVD-MoS film using aluminum-scandium alloy (AISc) edge contact. IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. 2024
Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact. IEEE Journal of the Electron Devices Society. 2023. 11. 15-21
Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Experimental demonstration of high-gain CMOS inverter operation at low V ( dd ) down to 0.5 V consisting of WSe2 n/p FETs. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. SC
Takamasa Kawanago, Takahiro Matsuzaki, Shunri Oda. Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors. Japanese Journal of Applied Physics. 2020. 59. 12. 120903-120903
Kentaro Matsuura, Masaya Hamada, Takuya Hamada, Haruki Tanigawa, Takuro Sakamoto, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo Tsutsui, et al. Normally-off sputtered-MoS(2)nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration. JAPANESE JOURNAL OF APPLIED PHYSICS. 2020. 59. 8

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MISC (46)：

川那子高暢, 松崎貴広, 梶川亮介, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整. Demonstration of High Gain WSe₂ CMOS Inverter operating at V_dd of 0.5 V. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
松浦賢太朗, 濱田昌也, 濱田拓也, 谷川晴紀, 坂本拓朗, 堀敦, 宗田伊理也, 川那子高暢, 角嶋邦之, 筒井一生, et al. Normally-off Sputtered MoS₂-nMISFETs for Large Scale Integration. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
川那子高暢, 大場智明, 小田俊理. Al₂O₃ゲート絶縁膜転写法を用いたトップゲートMoS₂ FETの作製. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2019. 66th
松崎貴広, 大場智明, 川那子高暢, 小田俊理. PVAによるMoS₂FETへのキャリアドーピングと電気特性への影響. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2019. 80th
川那子高暢, 高木寛之, 居駒遼, 大場智明. 基板バイアス構造を用いたキャリア注入制御とWSe₂FETの作製. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2018. 65th

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Books (2)：

グラフェンから広がる二次元物質の新技術と応用
2020
Integrated Nanodevices and Nanosystems Fabrication: Materials, Techniques, and New Opportunities
2017

Lectures and oral presentations (23)：

Fabrication and Characterization of Self-Aligned WSe2 p-Type Field-Effect Transistor
(ECS 2023 2023)
Low Voltage Operation of CMOS Inverter based on WSe2 n/p FETs
(242nd ECS Meeting 2022)
WSe2 n/p FETs を用いた低電圧動作CMOS インバータ
(シリコン材料・デバイス研究会 2022)
Experimental demonstration of high-gain CMOS Inverter at low Vdd down to 0.5 V consisting of WSe2 n/p FETs
(SSDM 2021 2021)
Fabrication of top-gate MoS2 FET with transferred Al2O3 gate dielectric
(ECS 2019 2019)

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Education (3)：

2008 - 2011 東京工業大学大学院総合理工学研究科物理電子システム創造専攻博士後期課程
2006 - 2008 東京工業大学大学院総合理工学研究科物理電子システム創造専攻博士前期課程
2002 - 2006 職業能力開発総合大学校電子工学科

Professional career (1)：

博士(工学) (東京工業大学)

Work history (5)：

2016/04 - 現在 Tokyo Institute of Technology Institute of Innovative Research
2015/01 - 2016/03 Tokyo Institute of Technology
2013/04 - 2014/12 日本学術振興会特別研究員PD
2011/04 - 2013/03 Tokyo Institute of Technology Frontier Research Center
2008/04 - 2011/03 日本学術振興会特別研究員DC1

Committee career (4)：

2019 - 現在 International Conference on Solid-State Devices and Materials (SSDM), Program Committee Member : Area 8
2023 - International Workshop on Junction Technology 2023 Committee Member
2021 - International Workshop on Dielectric Thin Films (IWDTF) 2021, Steering Committee Member
2019 - International Workshop on Dielectric Thin Films (IWDTF) 2019, Steering Committee Member

Awards (12)：

2022/07 - 2022年度末松賞「ディジタル技術の基礎と展開」支援
2021/06 - 第20回東京工業大学挑戦的研究賞
2016/03 - 第63回応用物理学会春季学術講演会ポスター賞
2014/03 - Best Poster Award at the Workshop on Future Trend of Nanoelectronics, WIMNACT-39
2013/06 - 第26回安藤博記念学術奨励賞

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Association Membership(s) (3)：

IEEE Electron Device Society (EDS) member , IEEE member , 応用物理学会

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