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J-GLOBAL ID：202001018659741108 Update date: Feb. 03, 2025

Sometani Mitsuru

ソメタニミツル | Sometani Mitsuru

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Affiliation and department：
Other affiliations (1)：

Osaka University

Research field (4)： Thin-film surfaces and interfaces , Crystal engineering , Electric/electronic material engineering , Electronic devices and equipment

Research keywords (6)：ゲート絶縁膜 , 信頼性評価 , 移動度 , MOSFET , シリコンカーバイド , パワー半導体

Research theme for competitive and other funds (3)：

2024 - 2029 Deep Insights into Heterointerface Engineering in Silicon Carbide based Devices
2020 - 2025 ワイドギャップ半導体MOS界面欠陥の正体の横断的解明
2021 - 2024 SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減

Papers (67)：

Heiji Watanabe, Takuma Kobayashi, Hayato Iwamoto, Takato Nakanuma, Hirohisa Hirai, Mitsuru Sometani. Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes. Japanese Journal of Applied Physics. 2025
Takuma Kobayashi, Kaho Koyanagi, Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Heiji Watanabe. Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs. Applied Physics Letters. 2024
Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada. 3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls. IEEE Electron Device Letters. 2024
Xufang Zhang, Tsubasa Matsumoto, Mitsuru Sometani, Masahiko Ogura, Hiromitsu Kato, Toshiharu Makino, Daisuke Takeuchi, Takao Inokuma, Satoshi Yamasaki, Norio Tokuda. Impact of water vapor annealing treatments on Al2O3/diamond interface. AIP Advances. 2024
Mitsuru Sometani, Kunihide Oozono, Shiyang Ji, Takeshi Tawara, Tadao Morimoto, Tomohisa Kato, Kazutoshi Kojima, Shinsuke Harada. Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth. IEEJ Transactions on Electronics, Information and Systems. 2024. 144. 3. 257-262

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Patents (4)：

半導体装置及び半導体装置の製造方法
半導体装置の製造方法及びこれに用いる半導体製造装置
炭化珪素半導体装置の製造方法
半導体装置の評価方法および半導体装置の評価装置

Books (3)：

次世代パワーエレクトロニクスの課題と評価技術
S&T出版 2022 ISBN:9784907002930
SiCパワーMOSFETに残された課題
公益社団法人応用物理先進パワー半導体分科会 2017 ISBN:9784863486393
SiC酸化膜界面のパッシベーション技術
公益社団法人応用物理先進パワー半導体分科会 2016 ISBN:9784863485846

Lectures and oral presentations (44)：

Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C-V and first-principles calculation
(20th International Conference on Silicon Carbide and Related Materials 2023)
トレンチ埋め戻しエピ法によるSiC-SJ-MOSFET開発
(ワイドギャップ半導体学会第12回研究会 2023)
Energy levels of carbon dangling-bond at 4H-SiC(0001)/SiO2 interface
(2022)
Impact of oxidation process on electron scattering and roughness at 4H-SiC non-polar MOS interfaces
(The 19th International Conference on Silicon Carbide and Related Materials 2022 2022)
Comparative Study of Performance of SiC SJ-MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth
(IEEE ISPSD 2022 2022)

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Education (1)：

- 2011 University of Tsukuba Graduate School of Pure and Applied Sciences

Work history (4)：

2021/08 - 現在 Osaka University
2021/04 - 現在国立研究開発法人産業技術総合研究所先進パワーエレクトロニクス研究センター主任研究員
2016/04 - 2021/03 国立研究開発法人産業技術総合研究所先進パワーエレクトロニクス研究センター研究員
2011/04 - 2016/03 富士電機株式会社

Committee career (11)：

2025/02 - 現在応用物理学会先進パワー半導体分科会第12回講演会実行委員(副委員長)
2024/10 - 現在応用物理学会 2025 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF 2025) プログラム委員(副委員長)
2021/04 - 現在ワイドギャップ半導体学会企画委員会企画幹事
2023/02 - 2023/12 応用物理学会先進パワー半導体分科会第10回講演会実行委員
2022/10 - 2023/10 応用物理学会 2023 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF 2023) プログラム委員

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Awards (2)：

2024/03 - IOP Publishing Outstanding Reviewer Awards 2023 (Japanese Journal of Applied Physics)
2014/09 - 公益社団法人応用物理学会応用物理学会講演奨励賞ゲートバイアスストレスによるしきい値電圧変動の緩和挙動と新規測定法の提案

Association Membership(s) (2)：

The Japan Society of Wide Gap Semiconductors , 応用物理学会

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