• A
  • A
  • A
日本語 Help
Science and technology information site for articles, patents, researchers information, etc.

Co-authoring Researcher

Co-inventing Researcher

Researcher similar to the Researcher

Article similar to the Researcher

Patent similar to the Researcher

Research Project similar to the Researcher

Article(J-GLOBAL estimation)

Patent(J-GLOBAL estimation)

Rchr
J-GLOBAL ID:202101006689007050   Update date: Jan. 21, 2025

Chuang Lu-Chung

ソウ リチュウ | Chuang Lu-Chung
Clips
Affiliation and department:
Research field  (1): Mathematical physics and basic theory
Research keywords  (1): Crystal growth
Research theme for competitive and other funds  (1):
  • 2021 - 2023 Investigation of growth dynamics of faceted grain/grain/melt grain boundary junction during directional solidification of Si
Papers (17):
  • Peiyao Hao, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Lili Zheng. In situ observation and numerical analysis of temperature gradient effects on growth velocity during directional solidification of silicon. Journal of Materials Science. 2024. 59. 39. 18446-18460
  • Fan Yang, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar. Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon. Journal of Crystal Growth. 2024. 639. 127722-127722
  • Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara. Misorientation increase of small-angle grain boundaries during directional solidification of silicon. Journal of Crystal Growth. 2024. 127822-127822
  • Shashank Shekhar Mishra, Lu-Chung Chuang, Jun Nozawa, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara, Thierry Duffar. Vicinal (111) surfaces at Si solid-liquid interface during unidirectional solidification. Scripta Materialia. 2024
  • Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Thierry Duffar, Kozo Fujiwara. In situ study of growth kinetics of {1 0 0} and {1 1 0} crystal/melt interfaces during unidirectional solidification of silicon. Journal of Crystal Growth. 2024
more...
Patents (1):
  • 結晶の育成装置およびその保温カバー
Lectures and oral presentations  (28):
  • Growth behavior of small-angle grain boundaries during directional solidification of Si
    (SMTBEA-2024 2024)
  • Growth behavior of grain boundaries during directional solidification of Si
    (Internal seminar at IM2NP, CNRS 2024)
  • In situ observation of interfacial grooves of Σ9 grain boundaries during directional solidification of Si
    (JCCG-52 2023)
  • Dynamics of small-angle grain boundaries and lattice dislocations during directional solidification of multi-crystalline silicon
    (International Workshop on Energy Materials and Modelingfor Future Technology (EMMFT-2023) 2023)
  • Groove formation of Σ9 grain boundaries at solid/melt interface of Si
    (2023)
more...
Professional career (1):
  • 博士(理学) (東北大学)
Work history (3):
  • 2021/04 - 現在 Tohoku University Institute for Materials Research Crystal Physics Assistant Professor
  • 2019/10 - 2021/03 Tohoku University Institute for Materials Research Crystal Physics Academic Fellow
  • 2016/10 - 2019/09 Tohoku University Institute for Materials Research Crystal Physics Research Assistant
Association Membership(s) (2):
The Japan Institute of Metals and Materials ,  The Japanese Association for Crystal Growth
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page