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J-GLOBAL ID:202201001306188191   Update date: Jun. 17, 2024

Kanegae Kazutaka

カネガエ カズタカ | Kanegae Kazutaka
Affiliation and department:
Job title: Assistant Professor
Research theme for competitive and other funds  (3):
  • 2023 - 2026 電子デバイス応用に向けた絶縁体/酸化ガリウム界面欠陥の定量と制御
  • 2022 - 2024 β-及びκ-酸化ガリウム中の深い準位の定量と結晶成長における制御
  • 2019 - 2022 超低損失パワーデバイス実現に向けた窒化ガリウム中の深い準位の生成メカニズムの解明
Papers (19):
  • Keisuke Watanabe, Hiroyuki Nishinaka, Yuuya Nishioka, Kousuke Imai, Kazutaka Kanegae, Masahiro Yoshimoto. The deposition and the optical characteristics of Cu-based metal halide Cs3Cu2I5 thin film via mist deposition. Japanese Journal of Applied Physics. 2024. 63. 5
  • Yoko Taniguchi, Hiroyuki Nishinaka, Kazuki Shimazoe, Toshiyuki Kawaharamura, Kazutaka Kanegae, Masahiro Yoshimoto. Visible-light absorption of indium oxide thin films via Bi3+ doping for visible-light-responsive photocatalysis. Materials Chemistry and Physics. 2024. 315
  • Shota Kaneki, Taichiro Konno, Takeshi Kimura, Kazutaka Kanegae, Jun Suda, Hajime Fujikura. Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse. Applied Physics Letters. 2024
  • Sho Hasegawa, Noriyuki Hasuike, Kazutaka Kanegae, Hiroyuki Nishinaka, Masahiro Yoshimoto. Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence. Materials Science in Semiconductor Processing. 2023. 162. 107543-107543
  • Kazuki Shimazoe, Hiroyuki Nishinaka, Yoko Taniguchi, Takahiro Kato, Kazutaka Kanegae, Masahiro Yoshimoto. Vertical self-powered ultraviolet photodetector using α-Ga2O3 thin films on corundum structured rh-ITO electrodes. Materials Letters. 2023. 341. 134282-134282
more...
MISC (1):
  • 西中浩之, 上田修, 迫秀樹, 池永訓昭, 宮戸祐治, 蓮池紀幸, 鐘ケ江一孝, 吉本昌広. Single-domain κ-Ga2O3 thin films grown on ε-GaFeO3 substrates. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2022. 83rd
Lectures and oral presentations  (18):
  • ワイドバンドギャップ半導体の点欠陥の定量
    (第16回ナノ構造エピタキシャル成長講演会 2024)
  • 深紫外LED の応用に向けたSi ドープhex-InGaO3 の結晶成長及び特性評価
    (第16回ナノ構造エピタキシャル成長講演会 2024)
  • ミストCVD法を用いたβ-Ga2O3へのFドープ
    (第16回ナノ構造エピタキシャル成長講演会 2024)
  • バルクGaNの最高移動度の更新と室温移動度の特異な振る舞い
    (第84回応用物理学会秋季学術講演会 2023)
  • バルクGaNの低温最高移動度の更新:14300cm2/Vs
    (第70回応用物理学会春季学術講演会 2023)
more...
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