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J-GLOBAL ID:202201019366096730   Update date: Nov. 28, 2024

Ohnishi Kazuki

オオニシ カズキ | Ohnishi Kazuki
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Affiliation and department:
Research field  (3): Optical engineering and photonics ,  Crystal engineering ,  Electric/electronic material engineering
Research keywords  (4): 光デバイス ,  Nitride Semiconductors ,  Crystal Growth ,  半導体工学
Research theme for competitive and other funds  (3):
  • 2023 - 2026 p型GaN基板の実現に向けたHVPE成長技術の研究開発
  • 2024 - 2026 公益財団法人立松財団 2024年度一般研究助成
  • 2020 - 2022 高性能GaN系素子作製に向けたハライド気相成長技術の確立
Papers (15):
  • Zhe Cheng, Zifeng Huang, Jinchi Sun, Jia Wang, Tianli Feng, Kazuki Ohnishi, Jianbo Liang, Hiroshi Amano, Ru Huang. (Ultra)wide bandgap semiconductor heterostructures for electronics cooling. Applied Physics Reviews. 2024
  • Kazuki Ohnishi, Kansuke Hamasaki, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy. Journal of Crystal Growth. 2024. 648. 127923
  • Kansuke Hamasaki, Kazuki Ohnishi, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy. Journal of Crystal Growth. 2024. 628. 127529-127529
  • Hirotaka Watanabe, Shugo Nitta, Yuto Ando, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate. Journal of Crystal Growth. 2024. 628. 127552-127552
  • Shun Lu, Manato Deki, Takeru Kumabe, Jia Wang, Kazuki Ohnishi, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic. Applied Physics Letters. 2023
more...
Lectures and oral presentations  (54):
  • Room-temperature photoluminescence lifetimes of Mg-doped p-type GaN layers grown by halide vapor phase epitaxy
    (International Workshop on Nitride Semiconductors 2024 (IWN2024) 2024)
  • Optical fiber approximation of GaN-based vertical-cavity surface emitting laser diodes with monolithic curved mirror
    (International Workshop on Nitride Semiconductors 2024 (IWN2024) 2024)
  • 凹面鏡を有するGaN系面発光レーザーの光ファイバー近似
    (第84回応用物理学会秋季学術講演会 2024)
  • Recent Progress of Halide Vapor Phase Epitaxy for GaN Vertical Power Devices
    (The 9th Asian Conference on Crystal Growth and Crystal Technology (CGCT-9) 2024)
  • 低抵抗n型GaN基板作製に向けた高濃度Sn添加GaNのHVPE成長
    (第71回応用物理学会春季学術講演会 2024)
more...
Education (3):
  • 2019 - 2022 Nagoya University Graduate School of Engineering Department of Electronics
  • 2017 - 2019 Tohoku University Graduate School of Engineering Department of Applied Physics
  • 2013 - 2017 Tohoku University Faculty of Engineering
Professional career (1):
  • 博士(工学) (名古屋大学)
Work history (3):
  • 2024/04 - Mie University Innovation Center for Semiconductor and Digital Future Assistant Professor
  • 2022/04 - 2024/03 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Reserch of Future Electronics
  • 2020/04 - 2022/03 Japan Society for the Promotion of Science
Awards (4):
  • 2023/06 - 日本結晶成長学会ナノ構造エピタキシャル成長分科会 第15回ナノ構造エピタキシャル成長講演会 研究奨励賞
  • 2022/03 - IEEE Nagoya Section Excellent Student Award
  • 2021/12 - 日本結晶成長学会ナノ構造エピタキシャル成長分科会 第13回ナノ構造エピタキシャル成長講演会発表奨励賞
  • 2021/09 - 応用物理学会 第50回(2021年春季)応用物理学会講演奨励賞 HVPE法によって作製されたp型GaNの電気および構造特性評価
Association Membership(s) (2):
日本結晶成長学会 ,  The Japan Society of Applied Physics
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