Rchr
J-GLOBAL ID：202201019366096730
Update date: Jul. 17, 2024
Ohnishi Kazuki
オオニシ カズキ | Ohnishi Kazuki
Affiliation and department：
Research field (3)：
Optical engineering and photonics
, Crystal engineering
, Electric/electronic material engineering
Research keywords (4)：
光デバイス
, Nitride Semiconductors
, Crystal Growth
, 半導体工学
Research theme for competitive and other funds (3)：
- 2023 - 2026 p型GaN基板の実現に向けたHVPE成長技術の研究開発
- 2024 - 2026 公益財団法人立松財団 2024年度一般研究助成
- 2020 - 2022 高性能GaN系素子作製に向けたハライド気相成長技術の確立
Papers (14)：
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Kansuke Hamasaki, Kazuki Ohnishi, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy. Journal of Crystal Growth. 2024. 628. 127529-127529
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Hirotaka Watanabe, Shugo Nitta, Yuto Ando, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate. Journal of Crystal Growth. 2024. 628. 127552-127552
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Shun Lu, Manato Deki, Takeru Kumabe, Jia Wang, Kazuki Ohnishi, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic. Applied Physics Letters. 2023
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Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Shun Lu, Manato Deki, Yoshio Honda, Hiroshi Amano. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy. Journal of Applied Physics. 2022
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Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates. Journal of Crystal Growth. 2022. 592. 126749-126749
ｍore...
Lectures and oral presentations (51)：
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Recent Progress of Halide Vapor Phase Epitaxy for GaN Vertical Power Devices
(The 9th Asian Conference on Crystal Growth and Crystal Technology (CGCT-9) 2024)
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低抵抗n型GaN基板作製に向けた高濃度Sn添加GaNのHVPE成長
(第71回応用物理学会春季学術講演会 2024)
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Effects of growth pressure on TMGa decomposition and carbon incorporation in GaN MOVPE
(14th International Conference on Nitride Semiconductors 2023 (ICNS-14) 2023)
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Lateral p-type GaN Schottky barrier diode using annealed Mg ohmic contact layer on low-Mg-concentration p-GaN
(14th International Conference on Nitride Semiconductors 2023 (ICNS-14) 2023)
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Thermodynamic analysis for halide vapor phase epitaxy of Sn-doped n-type GaN
(14th International Conference on Nitride Semiconductors 2023 (ICNS-14) 2023)
ｍore...
Education (3)：
- 2019 - 2022 Nagoya University Graduate School of Engineering Department of Electronics
- 2017 - 2019 Tohoku University Graduate School of Engineering Department of Applied Physics
- 2013 - 2017 Tohoku University Faculty of Engineering
Professional career (1)：
Work history (3)：
- 2024/04 - Mie University Innovation Center for Semiconductor and Digital Future Assistant Professor
- 2022/04 - 2024/03 Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Reserch of Future Electronics
- 2020/04 - 2022/03 Japan Society for the Promotion of Science
Awards (4)：
- 2023/06 - 日本結晶成長学会ナノ構造エピタキシャル成長分科会 第15回ナノ構造エピタキシャル成長講演会 研究奨励賞
- 2022/03 - IEEE Nagoya Section Excellent Student Award
- 2021/12 - 日本結晶成長学会ナノ構造エピタキシャル成長分科会 第13回ナノ構造エピタキシャル成長講演会発表奨励賞
- 2021/09 - 応用物理学会 第50回(2021年春季)応用物理学会講演奨励賞 HVPE法によって作製されたp型GaNの電気および構造特性評価
Association Membership(s) (2)：
日本結晶成長学会
, The Japan Society of Applied Physics
