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J-GLOBAL ID：202301002236184987   Update date: Aug. 29, 2024

shimamura kazutoshi

シマムラ カズトシ | shimamura kazutoshi
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Affiliation and department：
Kanazawa University

About Kanazawa University


Research theme for competitive and other funds  (3)：
  • 2024 - 2027 Evaluation of magnetic properties of ferromagnetic thin films deposited on ferroelectric substrates and elucidation of their mechanisms
  • 2021 - 2024 Elucidation of the mechanism of organic film deposition by rapid expansion of supercritical solutions (RESS) using CO2 and its application to general-purpose technology
  • 2019 - 2022 Development of angle-resolved tunneling spectroscopy down to the micro Kelvin range
Papers (16)：
  • Hironori Yamaguchi, Kazutoshi Shimamura, Yasuo Yoshida, Akira Matsuo, Koichi Kindo, Kiichi Nakano, Satoshi Morota, Yuko Hosokoshi, Takanori Kida, Yoshiki Iwasaki, et al. Field-induced quantum phase in a frustrated zigzag-square lattice. Physical Review Materials. 2023. 7. 9
  • Takaya Shimokawa, Kazutoshi Shimamura, Hiroki Wajima, Keishiro Kobayashi, Satoshi Abe, Yasuo Yoshida. Development of Angle-resolved Transport Measurement System in a Magnetic Field Using a Piezo-driven Rotator. Proceedings of the 29th International Conference on Low Temperature Physics (LT29). 2023
  • Akihide Moriyama, Nona A. Purba, Keishiro Kobayashi, Naoki Denda, Kazutoshi Shimamura, Masashi Ohashi, Yasuo Yoshida. Low-temperature Transport Properties of Manganese Thin Film Epitaxially Grown on Insulating Substrate. Proceedings of the 29th International Conference on Low Temperature Physics (LT29). 2023
  • Kazutoshi Shimamura, Hiroki Wajima, Hayato Makino, Satoshi Abe, Yoshinori Haga, Yoshiaki Sato, Tatsuya Kawae, Yasuo Yoshida. Precise magnetization measurements down to 500 mK using a miniature 3He cryostat and a closed-cycle 3He gas handling system installed in a SQUID magnetometer without continuous-cooling functionality. Japanese Journal of Applied Physics. 2022. 61. 5
  • S. Ono, R. Häusermann, D. Chiba, K. Shimamura, T. Ono, B. Batlogg. High performance organic field-effect transistors with ultra-thin HfO 2 gate insulator deposited directly onto the organic semiconductor. Applied Physics Letters. 2014. 104. 1
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