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J-GLOBAL ID:202301008466731306   Update date: Jan. 12, 2025

CHANG WEN HSIN

CHANG WEN HSIN
Papers (18):
  • Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Naoya Okada, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa. Thermally stable Bi2Te3/WSe2 Van Der Waals contacts for pMOSFETs application. Scientific Reports. 2024. 14. 1
  • Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Toshifumi Irisawa. Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions. Applied Physics Express. 2024
  • Mitsuhiro Okada, Yuki Okigawa, Takeshi Fujii, Takahiko Endo, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Yasumitsu Miyata, Tetsuo Shimizu, Toshitaka Kubo, et al. Characterization of band alignment at a metal-MoS2 interface by Kelvin probe force microscopy. Japanese Journal of Applied Physics. 2024
  • Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons. Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film. Materials Horizons. 2023. 10. 6. 2254-2261
  • Mitsuhiro Okada, Jiang Pu, Yung-Chang Lin, Takahiko Endo, Naoya Okada, Wen-Hsin Chang, Anh Khoa Augustin Lu, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, et al. Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition. ACS Nano. 2022
more...
MISC (1):
  • CHANG W. H., 畑山祥吾, 齊藤雄太, 岡田直也, 遠藤尚彦, 宮田耕充, 入沢寿史. The Realization of Low Contact Resistance Sb2Te3/MoS2 Layered Structure. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
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