Taoka Noriyuki

Research theme for competitive and other funds (3)：

2022 - 2025 ゲルマニウム二次元結晶のヘテロ構造形成と電子物性制御
2020 - 2022 Formation of Ge two-dimensional crystals embedded into Si oxide and its device application
2012 - 2014 低エネルギー損失に向けた炭化ケイ素トランジスタの絶縁膜/炭化ケイ素界面の高品質化

Papers (162)：

Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki. Alignment control of self-assembling Si quantum dots. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023. 162
Keigo Matsushita, Akio Ohta, Shigehisa Shibayama, Tomoharu Tokunaga, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki. Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SG
Katsunori Makihara, Yuji Yamamoto, Yuki Imai, Noriyuki Taoka, Markus Andreas Schubert, Bernd Tillack, Seiichi Miyazaki. Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots. NANOMATERIALS. 2023. 13. 9
Shunsuke Nishimura, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki. Formation of ultra-thin NiGe film with single crystalline phase and smooth surface. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SC
Taiki Sakai, Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki. Evaluation of chemical structure and Si segregation of Al/Si(111). JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SC

ｍore...

MISC (6)：

Kusumandari, Noriyuki Taoka, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima. Defects induced by reactive ion etching in Ge substrate. Advanced Materials Research. 2014. 896. 241-244
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima. Effect of gate metal electrode on chemical bonding state in metal/Pr-oxide/Ge gate stack structure. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. 68-69
Osamu Nakatsuka, Yosuke Shimura, Wakana Takeuchi, Noriyuki Taoka, Shigeaki Zaima. Material properties and applications of Ge 1-xSn x alloys for Ge nanoelectronics. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. 116-117
M. Yokoyama, S. H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, et al. CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding. Digest of Technical Papers - Symposium on VLSI Technology. 2011. 60-61
M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, et al. Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding. Technical Digest - International Electron Devices Meeting, IEDM. 2010

ｍore...

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page