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J-GLOBAL ID:202301011694559212   Update date: Dec. 25, 2024

Taoka Noriyuki

Taoka Noriyuki
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Research theme for competitive and other funds  (3):
  • 2022 - 2025 ゲルマニウム二次元結晶のヘテロ構造形成と電子物性制御
  • 2020 - 2022 Formation of Ge two-dimensional crystals embedded into Si oxide and its device application
  • 2012 - 2014 低エネルギー損失に向けた炭化ケイ素トランジスタの絶縁膜/炭化ケイ素界面の高品質化
Papers (181):
  • Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki. Alignment control of self-assembling Si quantum dots. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023. 162
  • Keigo Matsushita, Akio Ohta, Shigehisa Shibayama, Tomoharu Tokunaga, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki. Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SG
  • Katsunori Makihara, Yuji Yamamoto, Yuki Imai, Noriyuki Taoka, Markus Andreas Schubert, Bernd Tillack, Seiichi Miyazaki. Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots. NANOMATERIALS. 2023. 13. 9
  • Shunsuke Nishimura, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki. Formation of ultra-thin NiGe film with single crystalline phase and smooth surface. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SC
  • Taiki Sakai, Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki. Evaluation of chemical structure and Si segregation of Al/Si(111). JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SC
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MISC (8):
  • T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima. Epitaxial growth and crystalline properties of Ge1-x-ySi xSny layers on Ge(001) substrates. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. 2014. 159-160
  • Kusumandari, Noriyuki Taoka, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima. Defects induced by reactive ion etching in Ge substrate. Advanced Materials Research. 2014. 896. 241-244
  • M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima. Optical properties of Ge 1-xSn x epitaxial layers with very high Sn contents. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. 98-99
  • Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima. Effect of gate metal electrode on chemical bonding state in metal/Pr-oxide/Ge gate stack structure. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. 68-69
  • Osamu Nakatsuka, Yosuke Shimura, Wakana Takeuchi, Noriyuki Taoka, Shigeaki Zaima. Material properties and applications of Ge 1-xSn x alloys for Ge nanoelectronics. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. 116-117
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