Yamaguchi Takahide

ヤマグチタカヒデ | Yamaguchi Takahide

Affiliation and department：

Research field (1)： Thin-film surfaces and interfaces

Research keywords (4)： semiconductor devices , diamond , quantum materials , superconductivity

Research theme for competitive and other funds (10)：

2022 - 2025 革新的ダイヤモンドエレクトロニクス創出のための高品質界面の形成
2019 - 2022 Development of high-mobility diamond FETs using h-BN heterostructures and exploration of their quantum transport phenomena
2013 - 2016 Electric field control of surface conductivity in diamond and related materials towards high temperature superconductivity
2008 - 2012 Control of electronic states by spin degrees of freedom
2010 - 2011 Clarification and exploration of novel transport phenomena caused by electron-electron interactions and spin degrees of freedom in molecular crystals

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Papers (145)：

Taisuke Kageura, Yosuke Sasama, Chikara Shinei, Tokuyuki Teraji, Keisuke Yamada, Shinobu Onoda, Yamaguchi Takahide. Charge stability of shallow single nitrogen-vacancy centers in lightly boron-doped diamond. Carbon. 2022. 192. 473-481
Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures. Nature Electronics. 2021. 5. 1. 37-44
Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu, Satoshi Moriyama, Jun-ichi Inoue, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors. Journal of Applied Physics. 2020. 127. 18. 185707-185707
Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Shiori Sugiura, Taichi Terashima, Shinya Uji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, et al. Quantum oscillations in diamond field-effect transistors with a h-BN gate dielectric. Physical Review Materials. 2019. 3. 12
Taisuke Kageura, Masakuni Hideko, Ikuto Tsuyuzaki, Aoi Morishita, Akihiro Kawano, Yosuke Sasama, Takahide Yamaguchi, Yoshihiko Takano, Minoru Tachiki, Shuuichi Ooi, et al. Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure. Scientific Reports. 2019. 9. 1

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MISC (180)：

山口尚秀. ダイヤモンド高移動度トランジスタ-特集 NIMS WEEK 2021研究者による最新成果. 金属. 2022. 92. 9. 926-933
笹間陽介, 山口尚秀. hBNゲート絶縁体を用いたノーマリーオフ型高移動度ダイヤモンド電界効果トランジスタ. New diamond = ニューダイヤモンド / ニューダイヤモンドフォーラム編. 2022. 38. 3. 20-25
Sasama Yosuke, Komatsu Katsuyoshi, Moriyama Satoshi, Imura Masataka, Sugiura Shiori, Terashima Taichi, Uji Shinya, Watanabe Kenji, Taniguchi Takashi, Uchihashi Takashi, et al. Quantum oscillations in a two-dimensional hole system at the h-BN/diamond heterointerface. Meeting Abstracts of the Physical Society of Japan. 2019. 74.2. 1088-1088
笹間陽介, 山口尚秀. hBNヘテロ界面を用いた高移動度ダイヤモンド電界効果トランジスタ. NEW DIAMOND. 2019. 35. 9-15
Sasama Yosuke, Komatsu Katsuyoshi, Moriyama Satoshi, Imura Masataka, Watanabe Kenji, Taniguchi Takashi, Uchihashi Takashi, Yamaguchi Takahide. Charge Carrier Transport in Diamond Field-Effect Transistors with h-BN Gate Dielectric. Meeting Abstracts of the Physical Society of Japan. 2018. 73.2. 1309-1309

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Patents (6)：

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Association Membership(s) (3)：

ニューダイヤモンドフォーラム , 日本物理学会 , 応用物理学会

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