• A
  • A
  • A
日本語 Help
Science and technology information site for articles, patents, researchers information, etc.
Advanced
search
ALL

Synonyms(0)

Find out more technical terms

Thesaurus Map Clips

ー



Please login to MyJ-GLOBAL to use J- GLOBAL.
Please register to create your MyJ-GLOBAL account, if you do not have one.
What is MyJ-GLOBAL?
Login Register now
Number of clips is over the max size. (Max number of Clips: 600)
Close
Reset
Go to 「How to search」 page
Advanced search: Search from
　
　Select basic information for advanced search
Free word
～
Chemical structure search
How to Search
NEW R FG i
C N O S F Cl Br I P X
JSME Molecular Editor by Peter Ertl and Bruno Bienfait
drag out MOL or RXN file
Import

MOLfile format is only available (V3000 format is not available)

              
Details
Related links
Search

Co-authoring Researcher

Co-inventing Researcher

Researcher similar to the Researcher

Article similar to the Researcher

Patent similar to the Researcher

Research Project similar to the Researcher

Article(J-GLOBAL estimation)

Patent(J-GLOBAL estimation)

Rchr
J-GLOBAL ID：202401013983045944   Update date: Jan. 07, 2025

Fujikura Hajime

フジクラ ハジメ | Fujikura Hajime
Clips
Affiliation and department：
Sumitomo Chemical Co., Ltd. IT-related Chemicals Research Laboratory

About Sumitomo Chemical Co., Ltd. IT-related Chemicals Research Laboratory


Job title： Fellow
Papers (60)：
  • Hiroshi Ohta, Yoshinobu Narita, Shota Kaneki, Toshio Kitamura, Fumimasa Horikiri, Hajime Fujikura, Shinichiro Takatani, Tomoyoshi Mishima. 6 kV GaN p-n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma. Applied Physics Letters. 2025
  • Takuya Maeda, Yusuke Wakamoto, Shota Kaneki, Hajime Fujikura, Atsushi Kobayashi. Structural and optical properties of epitaxial ScxAl1-xN coherently grown on GaN bulk substrates by sputtering method. Applied Physics Letters. 2024
  • K. Sano, H. Fujikura, T. Konno, S. Kaneki, S. Ichikawa, K. Kojima. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals. Applied Physics Letters. 2024
  • Masatomo Sumiya, Hajime Fujikura, Yoshitaka Nakano, Shuhei Yashiro, Yasuo Koide, Tohru Honda. Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods. Journal of Crystal Growth. 2024
  • Masafumi Yokoyama, Fumimasa Horikiri, Hisashi Mori, Taichiro Konno, Hajime Fujikura. Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers. Applied Physics Express. 2024
ｍore...
Professional career (1)：
  • Formation of InGaAs Quantum Structures by Molecular Beam Epitaxy and Control of Their Surfaces (Hokkaido University)
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page

TOP

BOTTOM