Rchr
J-GLOBAL ID：202401013983045944
Update date: Oct. 31, 2024
Fujikura Hajime
フジクラ ハジメ | Fujikura Hajime
Affiliation and department：
Job title：
Fellow
Papers (59)：
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Takuya Maeda, Yusuke Wakamoto, Shota Kaneki, Hajime Fujikura, Atsushi Kobayashi. Structural and optical properties of epitaxial ScxAl1-xN coherently grown on GaN bulk substrates by sputtering method. Applied Physics Letters. 2024
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K. Sano, H. Fujikura, T. Konno, S. Kaneki, S. Ichikawa, K. Kojima. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals. Applied Physics Letters. 2024
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Masatomo Sumiya, Hajime Fujikura, Yoshitaka Nakano, Shuhei Yashiro, Yasuo Koide, Tohru Honda. Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods. Journal of Crystal Growth. 2024
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Masafumi Yokoyama, Fumimasa Horikiri, Hisashi Mori, Taichiro Konno, Hajime Fujikura. Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers. Applied Physics Express. 2024
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Shota Kaneki, Taichiro Konno, Takeshi Kimura, Kazutaka Kanegae, Jun Suda, Hajime Fujikura. Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse. Applied Physics Letters. 2024
ｍore...
Professional career (1)：
- Formation of InGaAs Quantum Structures by Molecular Beam Epitaxy and Control of Their Surfaces (Hokkaido University)
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