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J-GLOBAL ID:202401021360337653   Update date: Mar. 26, 2025

Hibino Hiroki

ヒビノ ヒロキ | Hibino Hiroki
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Affiliation and department:
Job title: Professor
Research theme for competitive and other funds  (18):
  • 2020 - 2025 Petaherz-scale solid state physics exploring by attosecond high-harmonic-based ultrafast spectroscopy
  • 2021 - 2024 Design of 2D heterostructures by crystal growth
  • 2021 - 2024 自己触媒成長技術によるシリコン基板上新規ナノワイヤ構造・レーザーデバイスの創出
  • 2020 - 2024 ペタヘルツスピントロニクスの創出
  • 2019 - 2022 Development of free-standing nitride substrates using graphene
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Papers (231):
  • Shengnan Wang, Jack Crowther, Hiroyuki Kageshima, Hiroki Hibino, Yoshitaka Taniyasu. Epitaxial Intercalation Growth of hBN/Graphene Bilayer Heterostructure on Commercial Copper Foil. Chemistry of Materials. 2024
  • Yoshikazu Kawai, Takuto Nakao, Takato Oda, Noboru Ohtani, Hiroki Hibino. Influence of substrate sapphire orientation on direct CVD growth of graphene. Japanese Journal of Applied Physics. 2023
  • Fumihiko Maeda, Makoto Takamura, Hiroki Hibino. Core-level photoelectron spectroscopy study on the buffer-layer formed in approximately atmospheric pressure argon on n-type and semi-insulating SiC(0001). Surface Science. 2023
  • Yoshiaki Sekine, Katsuya Oguri, Hiroki Hibino, Hiroyuki Kageshima, Yoshitaka Taniyasu. Polarized Raman scattering spectroscopy of array of embedded graphene ribbons grown on 4H-SiC(0001). Applied Physics Express. 2023
  • Hiroki Hibino, Hiroyuki Kageshima. Carbonization-driven motion of Si islands on epitaxial graphene. Physical Review Materials. 2023
more...
MISC (1):
  • Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, Hiroki Hibino. Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC. Materials Research Society Symposium Proceedings. 2011. 1283. 40-45
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