Rchr
J-GLOBAL ID:200901002058959759   Update date: Jun. 09, 2020

Hosoi Takuji

ホソイ タクジ | Hosoi Takuji
Affiliation and department:
Job title: Assistant Professor
Research field  (2): Electronic devices and equipment ,  Electric/electronic material engineering
Research keywords  (1): Semiconductor device engineering
Research theme for competitive and other funds  (1):
  • Study on Breakdown Mechanism of Ultrathin MOS Gate Oxide
Papers (329):
  • Characterization of nitrogen distribution near SiO2/SiC interfaces annealed in NO. 2019. 119. 96. 1-4
  • Interface property of thermally grown SiO2/SiC structures and MOS characteristics. 2019
  • Takuya Nagura, Kenta Chokawa, Masaaki Araidai, Takuji Hosoi, Heiji Watanabe, Atsushi Oshiyama, Kenji Shiraishi. Theoretical Study on the Effect of Incorporation of Hf Atoms in AlON Dielectrics. 2019
  • Hironori Takeda, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Hiroshi Yano, Heiji Watanabe. Insight into Channel Conduction Mechanism of 4H-SiC(0001) MOSFET Based on Temperature-dependent Hall-effect Measurement. 2019
  • Takahiro Yamada, Daiki Terashima, Mikito Nozaki, Hisashi Yamada, Tokio Takahashi, Mitsuaki Shimizu, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe. Synchrotron-Radiation X-ray Photoelectron Spectroscopy Study of GaOx Interlayer Growth on GaN Substrate with Different Conduction Type. 2019
more...
MISC (3):
Professional career (1):
  • - (Osaka University)
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