Rchr
J-GLOBAL ID：200901005344015031
Update date: Aug. 30, 2020
Tatsuyama Chiei
タツヤマ チエイ | Tatsuyama Chiei
Affiliation and department：
Job title：
Dean of Faculty of Engineering
Research field (4)：
Electric/electronic material engineering
, Thin-film surfaces and interfaces
, Crystal engineering
, Applied materials
Research theme for competitive and other funds (6)：
MISC (63)：
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DV Gruznev, BV Rao, T Tambo, C Tatsuyama. Surface structure evolution during Sb adsorption on Si(111)-In(4 x 1) reconstruction. APPLIED SURFACE SCIENCE. 2002. 190. 1-4. 134-138
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MM Rahman, K Kurumatani, H Matada, T Tambo, C Tatsuyama. Short-period (Si-14/Ge-1)(N) superlattice buffers for growth of Si0.75Ge0.25 alloy layers. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2002. 41. 5A. 2845-2850
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T Tambo, A Shimizu, A Matsuda, C Tatsuyama. Stability of two-step-growth Bi2Sr2CuOx films on Si(001) using SrO buffer layer. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2002. 41. 1. 83-85
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MBE Grown Short-Period (SimGen)N Superlattice (SSLs) and its Effect on the Growth of Uniform Si0.75Ge0.25/(SSL)/Si(001) System. Material Science and Technology. 2002. B89, 252-256
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MM Rahman, H Matada, T Tambo, C Tatsuyama. Growth of Si0.75Ge0.25 alloy layers grown on Si(001) substrates using step-graded short-period (Si-m/Ge-n)(N) superlattices. JOURNAL OF APPLIED PHYSICS. 2001. 90. 1. 202-208
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Education (4)：
- - 1972 Osaka University
- - 1972 Osaka University Graduate School, Division of Engineering Electronics
- - 1966 Shizuoka University Faculty of Engineering
- - 1966 Shizuoka University Faculty of Engineering Department of Electronics
Professional career (1)：
- Engineering (Osaka University)
Committee career (3)：
- 1996 - 応用物理学会 薄膜表面物理分科会幹事
- 1991 - 電子情報通信学会 評議員(支部長)
- 1988 - 応用物理学会 分科会幹事
Association Membership(s) (4)：
Matenials Research Society
, 日本物理学会
, 電子情報通信学会
, 応用物理学会
