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Rchr
J-GLOBAL ID：200901009546686987
Update date: Sep. 07, 2022 Nakayama Hiroshi
ナカヤマ ヒロシ | Nakayama Hiroshi
ClipsMISC (64)
- H Nakayama, H Ohta, E Kulatov. Photo-thermal excitation gas-source MBE growth of super-doped Si : Mn for spin-photonics applications. THIN SOLID FILMS. 2001. 395. 1-2. 230-234
- H Nakayama, H Ohta, E Kulatov. Growth and properties of super-doped Si : Mn for spin-photonics. PHYSICA B. 2001. 302. 419-424
- Erkin Kulatov, Hiroshi Nakayama, Hitoshi Ohta. Electronic and Optical Properties of α-,β-, and γ-FeSi2. J. Phys. Soc. Japan. 2001. 70. 7. 2199-2204
- Site-specific physisorption and chemical reaction of subphthalocyanine molecules on Si(111)-(7x7). Phys. Rev. B. 2000. 61. 3. 1959-1964
- Monte-Carlo Master Equation Mehtod for a Simulation of Epitaxial Growth Dynamics. Appl. Surf. Sci. 2000. 159/160. 380-386
- Structural Evolution and Valence Electron States Change during Ultra Thin Silicon Oxide Growth. Appl. Surf. Sci. 2000. 159/160. 89-97
- Subtracted Auger Electron Spectra of Heavily Doped Transition Metal Impurities in Si. J. Cryst. Growth. 2000. 210. 1/3. 137-142
- Auger Electron Spectroscopy of Super Doped Si:Mn Thin Films. Appl. Surf. Sci. 1999. 142. 1/4. 537-542
- Valence State Analysis of Ca and Si in CaSi2 during CaSi2-H2O Reaction. J. Mater. Res. 1998. 13. 5. 1401-1404
- S Abe, H Nakayama, T Nishino, S Iida. Auger valence electron spectra in Ca-silicides. JOURNAL OF MATERIALS RESEARCH. 1997. 12. 2. 407-411
- Stochastic Growth Theory of Molecular Beam Epitaxy with Atom Correlation Effects : A Monte-Carlo Master Equation Method. Appl. Surf. Sci. 1997. 113/114. 631-637
- Velence-Electron Spectral Change and Charge Transfer Mechanism on CaSi2 during CaSi2-H2O Reaction. Appl. Surf. Sci. 1997. 113/114. 562-566
- Influence of the Stacking Sequence on the Electronic Structure and Optical Properties of CaSi2. J. Phys. Cond. Matt. 1997. 9. 46. 10159-10171
- T Kita, A Fujiwara, H Nakayama, T Nishino. Photocurrent anisotropy in compositional modulated superlattice of long-range ordered Ga0.5In0.5P. JOURNAL OF ELECTRONIC MATERIALS. 1996. 25. 4. 661-665
- Guang&ndash, pu Wei, Wen&ndash, biao Wu, Takashi Kita, Hiroshi Nakayama, Taneo Nishino, Wen Ma, Hiroaki Okamoto, Masanori Okuyama, et al. Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor. Jpn. J. Appl. Phys. 1996. 35. 10. 5342-5345
- Direct Optical Transitions in indirect-gap(A10.5Ga0.5)0.51In0.49P by Atomic Ordering. Phys. Rev. B. 1996. 53. 23. 15713-15718
- Growth Dynamics and an Order-Disorder Transition in Epitaxial Alloy Semiconductors. Surf. Sci. 1996. 363. 1/3. 409-415
- Atom Correlation and Configurational Ordering in Pseudobinary Epitaxial Semiconductors. J. Cryst. Growth. 1996. 163. 1/2. 135-142
- H NAKAYAMA, M TOCHIGI, H MAEDA, T NISHINO. KINETIC ISING-MODEL OF SITE-CORRELATED ADSORPTION AND SURFACE-DIFFUSION IN MOLECULAR-BEAM EPITAXY. JOURNAL OF CRYSTAL GROWTH. 1995. 150. 1-4. 168-175
- Selective Growth of Micro GaAs Dots on Si by Molecular Beam Epitaxy. J. Cryst. Growth. 1995. 150. 1/4 Pt 1. 671-676
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