Art

J-GLOBAL ID：200902266339035239   Reference number：06A0552220

Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

n型4H-SiCエピタキシャルウエハにおける熱酸化物の信頼性と転位との相関

Author (5)： SENZAKI Junji (Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2 ...) ,  KOJIMA Kazutoshi (Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2 ...) ,  KATO Tomohisa (Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2 ...) ,  SHIMOZATO Atsushi (Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2 ...) ,  FUKUDA Kenji (Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol., AIST Tsukuba Central 2 ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 89  Issue： 2  Page： 022909-022909-3  Publication year： Jul. 10, 2006 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： MOSFET ,...
Semi thesaurus term： anneal

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JST classification (1)： Dielectrics in general  (BM05010F)

Terms in the title (6)： 4H-SiC ,  エピタキシャル ,  ウエハ ,  熱酸化 ,  転位 ,  相関