Research field (1)：
Electronic devices and equipment
Research keywords (1)：
半導体デバイス放射線損傷
Research theme for competitive and other funds (8)：
2019 - 2022 原子力発電所等高放射線環境下で動作可能な電子回路の開発
2013 - 2016 Fabrication of thin film flexible transistor using gallium oxide
2005 - 2007 Radiation damage mechanism of advanced semiconductor materials and devices
2005 - 2007 Irradiation temperature dependence of advanced semiconductor devices
2005 - 2007 酸化ガリウムへのドーピングによる透明電極膜の導電率向上
2002 - 2004 Study on radiation damages of semiconductor devices for high and low temperature
2002 - 半導体デバイスの放射線損傷に関する研究
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Papers (40)：
Kouki Fukushima, Naoki Mizunuma, Tatsuya Uematsu, Kyoko Shimizu, Takehiro Ota, Isao Tsunoda, Masashi Yoneoka, Haruhiko Udono, Kenichiro Takakura. Study of deep levels in the Mg2Si grown by vertical Bridgeman method. Japanese Journal of Applied Physics. 2022. 62. SD. SD1012-SD1012
Kazuaki Sumi, Noboru Shimizu, Kenichiro Takakura, Isao Tsunoda. Low temperature formation of high-quality crystalline Ge (1 1 1) by improving Au catalyst crystallinity. Journal of Crystal Growth. 2021. 572. 126270-126270
Maria Glória Caño de Andrade, Luis Felipe de Oliveira Bergamim, Braz Baptista Júnior, Carlos Roberto Nogueira, Fábio Alex da Silva, Kenichiro Takakura, Bertrand Parvais, Eddy Simoen. Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors. Solid-State Electronics. 2021. 183. 108050-108050
C. Claeys, A. Oliviera, A. Veloso, L. He, K. Takakura, V. Putcha, H. Amimura, E. Simoen. Low Frequency Noise: A Show Stopper for State-of-the-art and Future Si, Ge-based and III-V Technologies. 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2021
