Rchr
J-GLOBAL ID:200901024077097141   Update date: Feb. 22, 2021

Takakura Kenichiro

タカクラ ケンイチロウ | Takakura Kenichiro
Affiliation and department:
Research field  (1): Electronic devices and equipment
Research keywords  (1): 半導体デバイス放射線損傷
Research theme for competitive and other funds  (8):
  • 2019 - 2022 原子力発電所等高放射線環境下で動作可能な電子回路の開発
  • 2013 - 2016 Fabrication of thin film flexible transistor using gallium oxide
  • 2005 - 2007 Radiation damage mechanism of advanced semiconductor materials and devices
  • 2005 - 2007 Irradiation temperature dependence of advanced semiconductor devices
  • 2005 - 2007 酸化ガリウムへのドーピングによる透明電極膜の導電率向上
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Papers (34):
  • K. Takakura, V. Putcha, E. Simoen, A. R. Alian, U. Peralagu, N. Waldron, B. Parvais, N. Collaert. Low-Frequency Noise Investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect Transistor with Different Gate Length and Orientation. IEEE Transactions on Electron Devices. 2020. 67. 8. 3062-3068
  • Taiki Nishijima, Satoshi Shimizu, Kinta Kusano, Kazuki Kudo, Masahiro Furuta, Yutaka Kusuda, Shinichi Motoyama, Nobuyuki Naka, Tomoko Numata, Kenichiro Takakura, et al. Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 °c. AIP Advances. 2020. 10. 5
  • Takashi Suemasu, Ken'ichiro Takakura, Masaya Tanaka, Tetsuo Fujii, Fumio Hasegawa. Magnetotransport properties of a single-crystalline β-FeSi2 layer grown on Si(001) substrate by reactive deposition epitaxy. Japanese Journal of Applied Physics, Part 2: Letters. 2020. 37. 3 B
  • K Takakura, V Putcha, E Simoen, A R Alian, U Peralagu, N Waldron, B Parvais, N Collaert. Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors. Semiconductor Science and Technology. 2020. 36. 2. 024003-024003
  • Joan Marc Rafi, Giulio Pellegrini, Philippe Godignon, Sofia Otero Ugobono, Gemma Rius, Isao Tsunoda, Masashi Yoneoka, Kenichiro Takakura, Gregor Kramberger, Michael Moll. Electron, neutron and proton irradiation effects on SiC radiation detectors. IEEE Transactions on Nuclear Science. 2020
more...
MISC (309):
Patents (4):
Education (2):
  • - 2002 University of Tsukuba
  • - 2002 University of Tsukuba Materials Science and Engneering
Professional career (1):
  • 博士(工学) (筑波大学)
Work history (4):
  • 2009/04 - 現在 Kumamoto National College of Technology Department of Information, Communication and Electronic Engineering
  • 2007/04 - 2009/03 熊本電波工業高等専門学校 電子工学科 准教授
  • 2006/04 - 2007/03 熊本電波工業高等専門学校 電子工学科 助教授
  • 2002/04 - 2006/03 - 熊本電波工業高等専門学校 電子工学科 助手
Association Membership(s) (1):
応用物理学会
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