Rchr
J-GLOBAL ID：200901024077097141   Update date: Apr. 15, 2024

Takakura Kenichiro

タカクラ ケンイチロウ | Takakura Kenichiro
Affiliation and department：
Kumamoto National College of Technology

About Kumamoto National College of Technology


Research field  (1)： Electronic devices and equipment
Research keywords  (1)： 半導体デバイス放射線損傷
Research theme for competitive and other funds  (10)：
  • 2023 - 2026 データ駆動科学によるシリサイド大型結晶開発と高効率熱光発電セルへの応用
  • 2019 - 2022 原子力発電所等高放射線環境下で動作可能な電子回路の開発
  • 2017 - 阿蘇の天然資源を用いた低コスト排ガス処理用触媒の開発
  • 2013 - 2016 Fabrication of thin film flexible transistor using gallium oxide
  • 2005 - 2007 Radiation damage mechanism of advanced semiconductor materials and devices
Show all
Papers (42)：
  • Kenichiro Takakura, Kensuke Matsumoto, Kousei Tateishi, Masashi Yoneoka, Isao Tsunoda, Shigekazu Suzuki, Shinji Kawatsuma. Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation. J. Robotics Mechatronics. 2024. 36. 1. 88-94
  • Atsuki Morimoto, Towa Hirai, Ayato Takazaiku, Yo Eto, Hajime Kuwazuru, Kenichiro Takakura, Isao Tsunoda. Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing. Japanese Journal of Applied Physics. 2024. 63. 2. 02SP50-02SP50
  • Kouki Fukushima, Naoki Mizunuma, Tatsuya Uematsu, Kyoko Shimizu, Takehiro Ota, Isao Tsunoda, Masashi Yoneoka, Haruhiko Udono, Kenichiro Takakura. Study of deep levels in the Mg2Si grown by vertical Bridgeman method. Japanese Journal of Applied Physics. 2022. 62. SD. SD1012-SD1012
  • Kazuaki Sumi, Noboru Shimizu, Kenichiro Takakura, Isao Tsunoda. Low temperature formation of high-quality crystalline Ge (1 1 1) by improving Au catalyst crystallinity. Journal of Crystal Growth. 2021. 572. 126270-126270
  • Maria Glória Caño de Andrade, Luis Felipe de Oliveira Bergamim, Braz Baptista Júnior, Carlos Roberto Nogueira, Fábio Alex da Silva, Kenichiro Takakura, Bertrand Parvais, Eddy Simoen. Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors. Solid-State Electronics. 2021. 183. 108050-108050
ｍore...
MISC (326)：
  • 高倉 健一郎. 研究グループ 紹介:熊本高等専門学校 電子材料・デバイス研究部. 電気学会論文誌. A. 2023. 143. 6. NL6_4-NL6_4
  • 角田功, 高倉健一郎. Metal induced lateral crystallization of amorphous Ge on insulating substrate. 電子情報通信学会技術研究報告(Web). 2023. 123. 8(SDM2023 1-17)
  • 森本敦己, 平井杜和, 高細工彩斗, 小嶺龍生, 高倉健一郎, 角田功. Solid phase crystallization of amorphous Ge/Mg/SiO2 stacked structure. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
  • 森本敦己, 阿部陸斗, 平井杏奈, 平井杜和, 高倉健一郎, 角田功. EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge / SiO2. 電子情報通信学会技術研究報告(Web). 2022. 122. 8(SDM2022 1-13)
  • 森本敦己, 阿部陸斗, 平井杏奈, 平井杜和, 高倉健一郎, 角田功. Influence of Mg diffusion on Mg-induced lateral crystallization of amorphous Ge / SiO2. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
ｍore...
Patents (4)：
Education (2)：
  • - 2002 University of Tsukuba
  • - 2002 University of Tsukuba Graduate School, Division of Engineering Materials Science and Engneering
Professional career (1)：
  • 博士(工学) (筑波大学)
Work history (5)：
  • 2020/04 - 現在 National Institute of Technology (KOSEN), Kumamoto College
  • 2009/04 - 2020/03 Kumamoto National College of Technology Department of Information, Communication and Electronic Engineering
  • 2007/04 - 2009/03 熊本電波工業高等専門学校 電子工学科 准教授
  • 2006/04 - 2007/03 熊本電波工業高等専門学校 電子工学科 助教授
  • 2002/04 - 2006/03 - 熊本電波工業高等専門学校 電子工学科 助手
Association Membership(s) (1)：
応用物理学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page

TOP

BOTTOM