Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt.

KHAN M N; NISHIZAWA S; KATO T; KOSUGI R; ARAI K

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J-GLOBAL ID：200902136465072114 Reference number：03A0004548

Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt.

けい素メルトからのAcheson種結晶への炭化けい素エピタキシャル層成長

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Author (5)： , , , ,
Material：
Volume： 57 Issue： 2 Page： 307-314 Publication year： Dec. 2002
JST Material Number： E0935A ISSN： 0167-577X Document type： Article
Article type：短報 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films , Crystal growth of semiconductors

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