Sugawara Hiroharu

スガワラヒロハル | Sugawara Hiroharu

Affiliation and department：
Job title： Associate Professor

Research field (4)： Applied materials , Electric/electronic material engineering , Magnetism, superconductivity, and strongly correlated systems , Semiconductors, optical and atomic physics

Research theme for competitive and other funds (8)：

2016 - 2019 Development of automotive silicide thermoelectric battery possessing sufficient power generation ability and long-lifetime
2005 - 2006 シリコンナノ導波路による誘導ラマン増幅
2001 - 2002 マイクロ凝集液滴の接触角を測定することによる表面エネルギー分布評価手法の提案
2001 - 2002 Clarification of ultra low friction mechanism of CNx in Nitrogen and design of low friction sliding system
1997 - 1998 磁場下における化学平衡・化学過程の観測と制御

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Papers (25)：

Keita Mukogawa, Hiroharu Sugawara, Mizuki Fujiwara, Tetsushi Matsuoka, Tetsuhide Shimizu, Taiki Yamamoto, Naoto Saito, Tamaki Hattori, Tatsuro Hanahjiri, Shunji Kurosu. Preliminary study for deposition of Mg<sub>2</sub>Si thin films with high-power impulse magnetron sputtering. JJAP Conference Proceedings. 2023. 10. 011003-011003
Yoji Imai, Hiroharu Sugawara, Yoshihisa Mori, Shigeyuki Nakamura, Atsushi Yamamoto, Ken-ichi Takarabe. Energetic consideration of compounds at Mg2Si-Ni electrode interlayer produced by spark-plasma sintering. JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 5
H. Sugawara, F. Tanoue, S. Kitamura, T. Katsuyama, K. Akahane, N. Yamamoto. Time-resolved photoluminescence study of InGaAs quantum dot structure prepared by ultrahigh-rate molecular beam epitaxial growth technique. Conference Digest - IEEE International Semiconductor Laser Conference. 2014. 147-148
H. Sugawara, F. Tanoue, S. Kitamura, T. Katsuyama, K. Akahane, N. Yamamoto. Time-Resolved Photoluminescence Study of InGaAs Quantum Dot Structure Prepared by Ultrahigh-rate Molecular Beam Epitaxial Growth Technique. 2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014). 2014. 147-148
Fumihiko Tanoue, Hiroharu Sugawara, Kouichi Akahane, Naokatsu Yamamoto. High net modal gain (> 100 cm(-1)) in 19-stacked InGaAs quantum dot laser diodes at 1000 nm wavelength band. OPTICS LETTERS. 2013. 38. 13. 2333-2335

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MISC (33)：

Tanoue Fumihiko, Hiroharu Sugawara, Akahane Kouichi, Yamamoto Naokatsu. Gain characterization of 19-stacked InGaAs/GaAs quantum dot laser diode fabricated by ultrahigh rate MBE growth technique. Technical report of IEICE. LQE. 2012. 112. 356. 1-4
TANOUE Fumihiko, SUGAWARA Hiroharu, AKAHANE Kouichi, YAMAMOTO Naokatsu. Fabrication of highly stacked InGaAs/GaAs quantum dot laser diode for 1-μm photonic waveband with ultrahigh rate MBE growth technique. IEICE technical report. 2011. 111. 185. 113-116
NAKAMURA Takuya, AKAHANE Kouichi, YAMAMOTO Naokatsu, KAWANISHI Tetsuya, SUGAWARA Hiroharu. Fabrication of 1μm waveband high growth rate quantum dots laser for low threshold current. IEICE technical report. 2010. 109. 401. 71-74
Sugawara Hiroharu, Nakamura Shingo, Masayuki Oouchi, Yui Kumura, Takenobu Shishido, Takatoshi Igarashi, Masato Kishi, Masahiro Tsuchiya, Masahiro Tsuchiya. Low temperature formation of ß-FeSi2 polycrystalline microstructure by pulsed laser deposition and thermal annealing. IEICE Electronics Express. 2004. 1. 9. 253-257
Hiroharu Sugawara, Tetsuya Hasegawa, Koichi Kitazawa. Chapter 204 Characterization of cuprate superconductors using tunneling spectra and scanning tunneling microscopy. Handbook on the Physics and Chemistry of Rare Earths. 2001. 31. 563-607

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Patents (2)：

物質界面を変形する方法
MATERIALS INTERFACE CHANGING METHOD

Lectures and oral presentations (7)：

Preliminary study for deposition of Mg2Si thin films with high-power impulse magnetron sputtering
(The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022))
Effect of spark plasma sintering temperature on microstructures across the interfaces between thermoelectric-material Mg2Si and Ni electrode
下水処理過程で発生する低温余剰廃熱からの熱発電試験
(日本熱電学会学術講演会)
"Quasi-Particle First Principle Calculation of Energy Bands and Carrier Densities in Distorted Mg2Si"
(, International Conference on Thermoelectrics (ICT 2017) 2017)
"Evaluation of a Bandgap of Cubic Mg2Si by First Principle Calculation with PMT-QSGW",
(, Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology (APAC-SILICIDE201 2016)

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Education (2)：

- 1994 The University of Tokyo
- 1994 The University of Tokyo Graduate School, Division of Engineering

Professional career (1)：

(BLANK) (The University of Tokyo)

Work history (19)：

2005/04 - 現在首都大学東京
2001 - 2004 Tokyo Metropolitan Institute of Technology
2001 - 2004 Associate Proffessor, Department of Electronic
1998 - 2000 Tokyo Metropolitan Institute of Technology
1998 - 2000 Research associate, Department of Electronic

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Awards (1)：

1996 - 応用磁気学会論文賞

Association Membership(s) (3)：

Institute of Electronic and Electronics Engineers(米国電気電子学会) , American Physical Society(米国物理学会) , 応用物理学会

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