J-GLOBAL ID:200901044070526218   Update date: Nov. 18, 2004


マツモト タカシ | MATSUMOTO Takashi
Affiliation and department:
Research field  (2): Applied materials science/Crystal engineering ,  Electron device/Electronic equipment
Research keywords  (3): Semiconductor ,  Epitayial Growth ,  Quantum Structure
Research theme for competitive and other funds  (3):
  • (]G0002[)-(]G0006[) Compound Semiconductors
  • ZnO Based Oxide Semiconductors
  • magnetic semiconductor nanostructure
MISC (12):
Books (1):
  • Iodide MBE of CuGaSe<sub>2</sub> on GaAs(100) substrates
    Inst. Phys. Conf. Ser. No152 1998
Lectures and oral presentations  (21):
  • Plasma assisted MBE growth and Characterization of hexagonal ZnO on GaAs(111) substrates
    (1st Asia -Pacific Wowk Shdp on Widegap Semoconductors 2003)
  • MBE growth and optical properties of ZnO on GaAs(111) substrates
    (11th Interanational Conference on II-VI Compounds 2003)
  • Optical properties of ZnMnSe heteroepitaxial layers
    (11th Interanational Conference on II-VI Compounds 2003)
  • Characterization of MBE grown ZnO on GaAs(111) substrates
    (12th International Conference on II-VI Compounds 2005)
  • Low temperature growth of transparent conducting ZnO films by plasma assisted deposition
    (15th International Conference on Ternary and Multinary Compounds 2006)
Education (2):
  • - 1969 The University of Tokyo Faculty of Engineering
  • - 1974 The University of Tokyo Graduate School, Division of Engineering
Professional career (1):
  • (BLANK) (The University of Tokyo)
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