Rchr

J-GLOBAL ID：200901070053284473 Update date: Jun. 06, 2020

Kitamura Toshio

キタムラトシオ | Kitamura Toshio

Affiliation and department：
Homepage URL (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T01551371
Research theme for competitive and other funds (1)：

GaN,SiCワイドギャップ半導体の光学、構造評価(顕微Raman分光、PL測定、XRD等々)

MISC (6)：

T Kitamura, XQ Shen, M Sugiyama, H Nakanishi, M Shimizu, H Okumura. Generation of cubic phase in molecular-beam-epitaxy-grown hexagonal InGaN epilayers on InN. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2006. 45. 1A. 57-60
K Jeganathan, T Kitamura, M Shimizu, H Okumura. High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS. 2002. 41. 1AB. L28-L30
T Kitamura, Y Ishida, XQ Shen, H Nakanishi, SF Chichibu, M Shimizu, H Okumura. Electrical characterization at cubic AlN/GaN heterointerface grown by radio-frequency plasma-assisted molecular beam epitaxy. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 2001. 228. 2. 599-602
T Kitamura, SH Cho, Y Ishida, T Ide, XQ Shen, H Nakanishi, S Chichibu, H Okumura. Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE. JOURNAL OF CRYSTAL GROWTH. 2001. 227. 471-475
KITAMURA T, SUZUKI Y, ISHIDA Y, SHEN X Q, NAKANISHI H, CHICHIBU S F, SHIMIZU M, OKUMURA H. Optical Properties of Cubic InGaN/GaN Multibpe Quantum Wells on 3C-SiC Substrates by Radio-frequency Plasma-assisted Molecular Beam Epitaxy. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 2001. 188. 2. 705-709

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Education (1)：

- 2006 Tokyo University of Science Graduate School of Science and Technology

Professional career (1)：

博士(工学)

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