Art

J-GLOBAL ID：200902123668590000   Reference number：02A0072692

Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

Author (7)： KITAMURA T (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  ISHIDA Y (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  SHEN X Q (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  NAKANISHI H (Sci. Univ. Tokyo, Chiba, JPN) ,  CHICHIBU S F (Univ. Tsukuba, Ibaraki, JPN) ,  SHIMIZU M (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  OKUMURA H (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
Material： Physica Status Solidi. B. Basic Research  (Phys Status Solidi B)
Volume： 228  Issue： 2  Page： 599-602  Publication year： Nov. 08, 2001 
JST Material Number： C0599A  ISSN： 0370-1972  Document type： Article
Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Terms in the title (2)： AlN ,  GaN