Art

J-GLOBAL ID：200902162701767685   Reference number：02A0127178

Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

Author (8)： KITAMURA T (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  SUZUKI Y (Sci. Univ. Tokyo, Chiba, JPN) ,  ISHIDA Y (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  SHEN X Q (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  NAKANISHI H (Sci. Univ. Tokyo, Chiba, JPN) ,  CHICHIBU S F (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  SHIMIZU M (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN) ,  OKUMURA H (National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
Material： Physica Status Solidi. A. Applied Research  (Phys Status Solidi A)
Volume： 188  Issue： 2  Page： 705-709  Publication year： Nov. 23, 2001 
JST Material Number： D0774A  ISSN： 0031-8965  Document type： Article
Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Terms in the title (3)： InGaN ,  GaN ,  3C-SiC