Advanced search: Search from
Select basic information for advanced search
| Free word |
|---|
| Details |  |
|---|---|
| Related links |  |
| Search |  |
Rchr
J-GLOBAL ID：200901082359931330
Update date: Nov. 01, 2024 Otani Yohei
オウタニ ヨウヘイ | Otani Yohei
ClipsPapers (40)
- Takuro Iwasaki, Toshiro Ono, Yohei Otani, Yukio Fukuda, Hiroshi Okamoto. Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique. ELECTRONICS AND COMMUNICATIONS IN JAPAN. 2015. 98. 6. 8-15
- Takehiro Haneda, Kosei Yanachi, Hiroki Ishizaki, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Yukio Fukuda. In situ formation of aluminum germanate interlayer for high-k/Ge metal-oxide-semiconductor structure by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen. Proceedings of the twelfth International Symposium on Sputtering and Plasma Processes (ISSP 2013). 2013. 402-405
- Yukio Fukuda, Hiroki Ishizaki, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Hiroshi Okamoto, Hidehumi Narita. Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen. APPLIED PHYSICS LETTERS. 2013. 102. 13. 132904-1-132904-4
- Takuro Iwasaki, Toshiro Ono, Yohei Otani, Yukio Fukuda, Hiroshi Okamoto. Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique. IEEJ Transactions on Electronics, Information and Systems. 2013. 133. 7
- Takuro Iwasaki, Toshiro Ono, Yohei Otani, Yukio Fukuda, Hiroshi Okamoto. Interface-state-density evaluation of p-type and n-type ge/genx structures by conductance technique. IEEJ Transactions on Electronics, Information and Systems. 2013. 133. 7. 1-1284
- Hiroshi Okamoto, Hidehumi Narita, Shinya Sato, Takuro Iwasaki, Toshiro Ono, Yohei Otani, Yukio Fukuda. DLTS evaluation of near-interface traps in Ge-MIS structures fabricated by ECR-plasma techniques. IEEJ Transactions on Electronics, Information and Systems. 2013. 133. 8. 9-1484
- Yukio Fukuda, Hiroshi Okamoto, Takuro Iwasaki, Kohei Izumi, Yohei Otani, Hiroki Ishizaki, Toshiro Ono. Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature. JAPANESE JOURNAL OF APPLIED PHYSICS. 2012. 51. 9. 090204-1-090204-3
- Yukio Fukuda, Hiroshi Okamoto, Takuro Iwasaki, Yohei Otani, Toshiro Ono. Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature. APPLIED PHYSICS LETTERS. 2011. 99. 13. 132907
- Yukio Fukuda, Yohei Otani, Hiroshi Toyota, Toshiro Ono. Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation. APPLIED PHYSICS LETTERS. 2011. 99. 2. 022902
- Yukio Fukuda, Yohei Otani, Tetsuya Sato, Hiroshi Toyota, Toshiro Ono. Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge. JOURNAL OF APPLIED PHYSICS. 2011. 110. 2. 026108
- Yukio Fukuda, Yuya Yazaki, Yohei Otani, Tetsuya Sato, Hiroshi Toyota, Toshiro Ono. Low-Temperature Formation of High-Quality GeO2 Interlayer for High-kappa Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2010. 57. 1. 282-287
- H. Ishizaki, M. Iida, Y. Otani, Y. Fukuda, T. Sato, T. Takamatsu, T. Ono. Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique. SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES. 2010. 33. 6. 227-233
- Yohei Otani, Yukio Fukuda, Soichiro Okamura, Kimitoshi Nakamura, Takashi Nishida, Kiyoshi Uchiyama, Tadashi Shiosaki. Formation Mechanism of Oriented Pb(Zr,Ti)O3 Thin Films on Platinum Bottom Electrodes from Amorphous Films Prepared by Liquid Delivery Metalorganic Chemical Vapor Deposition. JAPANESE JOURNAL OF APPLIED PHYSICS. 2009. 48. 9. 09KA02-1-09KA02-4
- 王谷洋平, 福田幸夫, 岡村総一郎, 中村仁宗, 西田貴司, 内山潔, 塩嵜忠. 白金電極膜上でのPZT薄膜の結晶化に関する一考察. 第26回強誘電体応用会議講演予稿集. 2009. 57-58
- Yohei Otani, Yukio Fukuda, Tetsuya Sato, Kiyokazu Nakagawa, Hiroshi Toyota, Toshiro Ono. Effects of electron-cyclotron-resonance oxygen plasma irradiation on properties of insulator/Ge-semiconductor interfaces prior to germanium nitride formation. JAPANESE JOURNAL OF APPLIED PHYSICS. 2008. 47. 9. 7553-7555
- 王谷洋平, 福田幸夫, 佐藤哲也, 中川清和, 豊田宏, 小野俊郎. ECR酸素プラズマ照射がGeNx/Ge界面特性に及ぼす影響. 第25回強誘電体応用会議講演予稿集. 2008. 179-180
- Yohei Otani, Takuo Tanaka, Yukio Fukuda, Hiroshi Toyota, Toshiro Ono. Effects of post-annealing on an insulator/germanium interface formed by ECR plasma irradiation. Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics. 2008. JSAP Catalog Number: AP082202. 197-201
- Yohei Otani, Yukio Fukuda, Masaki Shibuya, Kiyoshi Uchiyama, Tadashi Shiosaki. Fabrication of Lead-based Ferroelectric Thin Films by Spray-MOCVD. 13th US-Japan Seminar on Dielectric and Piezoelectric Ceramics. 2007. 284-287
- Yukio Fukuda, Yohei Otani, Yasuhiro Itayarna, Toshiro Ono. Electrical analyses of germanium MIS structure and spectroscopic measurement of the interface trap density in an insulator/germanium interface at room temperature. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2007. 54. 11. 2878-2883
- Yukio Fukuda, Yohei Otani, Hiroshi Toyota, Toshiro Ono. Electrical characterization techniques of dielectric thin films using metal-insulator-metal structures. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2007. 46. 10B. 6984-6986
Return to Previous Page
