8.5-mΩ cm<sup>2</sup> 600-V Double-Epitaxial MOSFETs in 4H-SiC

HARADA S; OKAMOTO M; YATSUO T; ADACHI K; FUKUDA K; ARAI K

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J-GLOBAL ID：200902272765664103 Reference number：04A0394623

8.5-mΩ cm² 600-V Double-Epitaxial MOSFETs in 4H-SiC

4H-SiCによる8.5-mΩ・cm² 600VダブルエピタキシャルMOSFET

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Material：
Volume： 25 Issue： 5 Page： 292-294 Publication year： May. 2004
JST Material Number： B0344B ISSN： 0741-3106 CODEN： EDLEDZ Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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8.5-mΩ cm2 600-V Double-Epitaxial MOSFETs in 4H-SiC

8.5-mΩ cm² 600-V Double-Epitaxial MOSFETs in 4H-SiC