Crystal structure of Si<sub>1-x</sub>C<sub>X</sub> FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION AT 700°C.

TAKESHITA T; ICHIGE K; KURATA Y; HASEGAWA S

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J-GLOBAL ID：200902068783675973 Reference number：91A0609372

Crystal structure of Si_1-xC_X FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION AT 700°C.

700°Cのプラズマ増速化学蒸着によるSi_1-xC_x膜の結晶構造

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Material：
Volume： 69 Issue： 11 Page： 7945-7947 Publication year： Jun. 01, 1991
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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Crystal structure of Si1-xCX FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION AT 700°C.

Crystal structure of Si_1-xC_X FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION AT 700°C.