Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond. Prediction versus experiment.

KATAYAMA-YOSHIDA H; NISHIMATSU T; YAMAMOTO T; ORITA N

Art

J-GLOBAL ID：200902104348896816 Reference number：01A1009449

Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond. Prediction versus experiment.

p型GaN,p型AlNおよびn型ダイヤモンドでの低抵抗ワイドバンドギャップ半導体の製作に対する共ドーピング法予測と実験

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Material：
Volume： 13 Issue： 40 Page： 8901-8914 Publication year： Oct. 08, 2001
JST Material Number： B0914B ISSN： 0953-8984 CODEN： JCOMEL Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Crystal growth of semiconductors , Electronic structure of crystalline semiconductors

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