High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates.

NAKAMURA S; SENOH M; NAGAHAMA S; IWASA N; YAMADA T; MATSUSHITA T; KIYOKU H; SUGIMOTO Y; CHOCHO K

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J-GLOBAL ID：200902108531008100 Reference number：98A0419910

High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates.

純GaN基板上に成長した高出力,長寿命のInGaN/GaN/AlGaN系レーザダイオード

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Material：
Volume： 37 Issue： 3B Page： L309-L312 Publication year： Mar. 15, 1998
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor lasers

Reference (12)：

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5) A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota and T. Tanahashi: Jpn. J. Appl. Phys. 36 (1997) L1130

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