Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates.

TSUCHIYA H; HASEGAWA F; OKUMURA H; YOSHIDA S

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J-GLOBAL ID：200902112461505559 Reference number：95A0125268

Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates.

立方晶GaN/(100)GaAsと六方晶GaN/(111)GaAs基板上におけるGaN層の水素化物気相エピタクシーの比較

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Material：
Volume： 33 Issue： 12A Page： 6448-6453 Publication year： Dec. 1994
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films , Semiconductor-semiconductor contacts with Gr.13-15 element compounds

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